Transport in Semiconductor Mesoscopic Devices David K. Ferry
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applied stress and sample geometry have a combination of modes (i.e., mixed modes). Crack growth rates under fatigue, when the specimen is cyclically subjected to low stresses, are predicted in equations given in chapter 7. Chapter 8 covers elastic-plastic fracture mechanics, which has extended the original scope of fracture mechanics to predict the performance of metals. Chapter 9 describes the experimental methods for measuring the key material properties, such as the plane strain fracture toughness, the crack opening displacement, and the κ-resistance curve. This book is well designed for a broad survey course on fracture
Transport in Semiconductor Mesoscopic Devices David K. Ferry IOP Publishing, 2015 316 pages, $91.72 (Kindle edition with audio/video $137.52) ISBN 978-0-7503-1102-1
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avid K. Ferry, from Arizona State University, is an expert in quantum effects, including charge-carrier transport, in semiconductor devices. He is the author/co-author of several wellregarded books and numerous articles in peer-reviewed journals in this area. In this book, Ferry concentrates on elements of transport associated with “mesoscopic devices,” which he defines as devices in which “the critical dimensions of the structure are comparable to the corresponding de Broglie wavelength of the electrons.” This book was written primarily as a textbook for first-year graduate students on the basis of Ferry’s course notes developed over several years. The material is organized into 10 chapters. The first chapter introduces fundamental concepts in semiconductor physics associated with nanoscale materials and devices, including a short discussion of nanofabrication techniques. The second chapter focuses on wires and channels and uses the quantum point contact as a tool to discuss concepts such as the density of
states, the Landauer transport formalism, scattering matrices, and Green’s function approaches. The Aharonov–Bohm effect in mesoscopic structures formed in semiconductor device materials is described in the third chapter. Chapter 4 covers carbon materials, including graphene and carbon nanotubes, as well as topological insulators and chalcogenides. Chapter 5 covers localization and conductance fluctuations and includes a short discussion of disorder and the differences between weak and strong localization, which is based on an approach developed by P.W. Anderson. The chapter concludes with discussions of correlation functions and phase coherence times. Chapter 6 covers three effects in which the conductance is affected by the presence of a magnetic field: the Shubnikov–de Haas effect, the quantum Hall effect, and the fractional quantum Hall effect. The Buttiker– Landauer approach is used to illuminate the latter two effects. Chapter 7 covers spin transport processes, including spin Hall effects, spin injection, spin currents
mechanics. Each chapter contains many worked example problems and a good selection of homework problems with answers. A solution manual is available that includes images that make the major concepts cl
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