Tungsten Silicide Stability and Interface Reaction Determined by Modeling and Experiments
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TING FENG AND ARIS CHRISTOU University of Maryland, Department of Materials and Nuclear Engineering, College Park, MD 20742 ABSTRACT
The thermal stability of W/Si multilayers (MLs) has been simulated up to 1000°C and 8 hour anneals. The simulation has been carried out with and without the presence of Au overlayers. The results are compared with experimental results by Rutherford Backscattering spectroscopy (RBS). The RBS results also show the presence of excess Ga at the interface. INTRODUCTON
Tungsten-silicon multilayers are of importance in two main fields. W/Si MLs is a material combination appropriate for applications in the area of soft X-ray optics as elements for interferential mirrors, analyzer crystals, etc.[l]. Tungsten silicides formed from W/Si MLs via thermal processing are also applied as microelectronics interconnects and are suitable for selfaligned gate technology in FET structures on GaAs[2]. Microstructure of W/Si MLs Usually, in order to deter rapid diffusion such as grain boundary diffusion and surface diffusion, an amorphous thin film structure is preferred. In many cases, the W/Si MLs structure is amorphous for both the Si layer and the W layer. It has been reported that the evaporated
tungsten films in multilayers are amorphous for the layer thickness dw
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