Tunneling Field Effect Transistor Technology
This book provides a single-source reference to the state-of-the art in tunneling field effect transistors (TFETs). Readers will learn the TFETs physics from advanced atomistic simulations, the TFETs fabrication process and the important roles that
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nneling Field Effect Transistor Technology
Tunneling Field Effect Transistor Technology
Lining Zhang Mansun Chan •
Editors
Tunneling Field Effect Transistor Technology
123
Editors Lining Zhang Hong Kong University of Science and Technology Hong Kong China
ISBN 978-3-319-31651-2 DOI 10.1007/978-3-319-31653-6
Mansun Chan Hong Kong University of Science and Technology Hong Kong China
ISBN 978-3-319-31653-6
(eBook)
Library of Congress Control Number: 2016935208 © Springer International Publishing Switzerland 2016 This work is subject to copyright. All rights are reserved by the Publisher, whether the whole or part of the material is concerned, specifically the rights of translation, reprinting, reuse of illustrations, recitation, broadcasting, reproduction on microfilms or in any other physical way, and transmission or information storage and retrieval, electronic adaptation, computer software, or by similar or dissimilar methodology now known or hereafter developed. The use of general descriptive names, registered names, trademarks, service marks, etc. in this publication does not imply, even in the absence of a specific statement, that such names are exempt from the relevant protective laws and regulations and therefore free for general use. The publisher, the authors and the editors are safe to assume that the advice and information in this book are believed to be true and accurate at the date of publication. Neither the publisher nor the authors or the editors give a warranty, express or implied, with respect to the material contained herein or for any errors or omissions that may have been made. Printed on acid-free paper This Springer imprint is published by Springer Nature The registered company is Springer International Publishing AG Switzerland
Preface
Power consumptions have been a dominant constraint in nanoscale CMOS technologies. Different techniques to reduce computational power spanning from the architecture level to the fundamental semiconductor devices level are actively explored. One possible solution from the device perspective is to decrease the operation voltage without sacrifice of the switching properties. While its applicability was proved from the circuit theory, a lot of efforts in the electron device society have been gathered on devices with possible steep slopes that go beyond the traditional MOSFETs. Tunnel field-effect transistors are one representative of the steep slope devices. Their operations are based on the controlled switching of quantum tunneling, instead of the thermionic emissions. Historically, the study of similar concept may date back to the 1970s when the physicist used the gated tunnel junction to study the two-dimensional electron gas. Later, in the 1980s the interband quantum tunneling was observed in a DRAM trench transistor and people started to think about a device concept based on controlled interband tunneling. More device proposals followed in the 1990s. In 2004, a steep slope of 40 mV/dec was observed in carbon nanotube transistors and was attributed to
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