Two-step growth of high-quality Nb/(Bi 0.5 Sb 0.5 ) 2 Te 3 /Nb heterostructures for topological Josephson junctions
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ARTICLE Two-step growth of high-quality Nb/(Bi0.5Sb0.5)2Te3/Nb heterostructures for topological Josephson junctions Hui Zhang Hefei National Laboratory for Physical Sciences at the Microscale (HFNL), University of Science and Technology of China, Hefei 230026, China; Institute for Quantum Computing, University of Waterloo, Waterloo, Ontario N2L 3G1, Canada; Electrical and Computer Engineering (ECE), University of Waterloo, Waterloo, Ontario N2L 3G1, Canada; and National Synchrotron Radiation Laboratory, University of Science and Technology of China, Hefei 230026, China
Xiaodong Ma Hefei National Laboratory for Physical Sciences at the Microscale (HFNL), University of Science and Technology of China, Hefei 230026, China; Institute for Quantum Computing, University of Waterloo, Waterloo, Ontario N2L 3G1, Canada; and Electrical and Computer Engineering (ECE), University of Waterloo, Waterloo, Ontario N2L 3G1, Canada
Lin Li Institute for Quantum Computing, University of Waterloo, Waterloo, Ontario N2L 3G1, Canada; and Electrical and Computer Engineering (ECE), University of Waterloo, Waterloo, Ontario N2L 3G1, Canada
Deler Langenberg Institute for Quantum Computing, University of Waterloo, Waterloo, Ontario N2L 3G1, Canada
Chang Gan Zeng Hefei National Laboratory for Physical Sciences at the Microscale (HFNL), University of Science and Technology of China, Hefei 230026, China
Guo Xing Miaoa) Institute for Quantum Computing, University of Waterloo, Waterloo, Ontario N2L 3G1, Canada; and Electrical and Computer Engineering (ECE), University of Waterloo, Waterloo, Ontario N2L 3G1, Canada (Received 6 February 2018; accepted 24 May 2018)
The topological insulator/superconductor heterostructure is one of the most promising platforms to create and manipulate Majorana bound states. Here, we used molecular beam epitaxy to grow high-quality (Bi0.5Sb0.5)2Te3 films on Nb surfaces. To promote proper (Bi0.5Sb0.5)2Te3 film nucleation in the early growth stage, we developed a two-step growth method. Bi, Sb, and Te clusters were first evaporated at a low temperature of 180 °C, which is below the typical growth temperature and then annealed to form a crystalized passivation layer. Second, a standard (Bi0.5Sb0.5)2Te3 film was grown under the normal deposition temperature of 280 °C. We used reflection high-energy electron diffraction, high-resolution transmission electron microscopy, X-ray photoelectron spectroscopy, and X-ray diffraction to further characterize the (Bi0.5Sb0.5)2Te3 film and passivation layer quality. Finally, the top Nb film was laid down by magnetron sputtering at room temperature. The hetero-Nb/epitaxial (Bi0.5Sb0.5)2Te3/Nb stacks were further fabricated into micro-Josephson junctions and showed clear Josephson currents demonstrating an excellent material quality.
I. INTRODUCTION
Quantum computing has been one of the most exciting developments in modern computational technologies and can potentially revolutionize our ways of information processing and communication. The field is actively searching for novel platforms c
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