Ultra-Thin p + Layers in GaAs
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ULTRA-THIN p+ LAYERS IN GaAs K. T. SHORT, U. K. CHAKRABARTI AND S. J. PEARTON AT&T Bell Laboratories, Murray Hill, New Jersey 07974 ABSTRACT The formation of shallow (0.05-0.2 pm) p+ layers in GaAs by pulse diffusion of Zn from a doped oxide source, thermal diffusion of Cd by vapor transport, or by low energy implantation of Cd, Mg, Be, Zn or Hg ions was investigated by electrochemical capacitance-voltage profiling, Secondary Ion Mass Spectrometry, Rutherford backscattering and Hall measurements. Hole densities in excess of 1019 cm- 3 are obtainable by either Zn diffusion or acceptor implantation, though the high temperature cycle must be kept to • 107
> 107 168
3 X 1012
2.7 x 10'
41 94
2.9x 10"3 2.4x 1013
7.2 x 1014 2.3x 10' 1.Sx 103
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