Under-Gate Triode Type Field Emission Displays with Carbon Nanotube Emitters
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UNDER-GATE TRIODE TYPE FIELD EMISSION DISPLAYS WITH CARBON NANOTUBE EMITTERS J. H. Kang, Y. S. Choi, W. B. Choi1, N. S. Lee1, Y. J. Park1, J. H. Choi1, H. Y. Kim, Y. J. Lee, D. S. Chung, Y. W. Jin1, J. H. You2, S. H. Jo2, J. E. Jung, and J. M. Kim The National Creative Research Initiatives Center for Electron Emission Source, Samsung Advanced Institute of Technology, P. O. Box 111, Suwon 440-600, KOREA 1 Display Lab., Samsung Advanced Institute of Technology 2 FED team, Samsung SDI ABSTRACT A new structure of triode type field emission displays based on single-walled carbon nanotube emitters is demonstrated. In this structure, gate electrodes are situated under cathode electrodes with an in-between insulating layer, so called under-gate type triode. Electron emission from the carbon nanotube emitters is modulated by changing gate voltages. A threshold voltage is approximately 70 V at the anode bias of 275 V. INTRODUCTION Carbon nanotubes have attracted much attention for application to the field emission sources due to their high aspect ratios, small tip radii of curvature, high chemical stability, and high mechanical strength [1]. Recently, there have been many efforts to apply carbon nanotubes to field emission sources. Wang et al. [2] grew aligned nitrogen-containing carbon nanofibers using a microwave plasma-assisted chemical vapor deposition method. They achieved a lowthreshold field of 1.0 V/ and a high emission current density of 200 mA/ at an applied field of 5-6 V/. Fan et al. [3] synthesized self-oriented carbon nanotubes on silicon substrates and analyzed their field emission characteristics. Choi et al. [4] fabricated a fully sealed field emission display(FED) panel with the 4.5inch diagonal using single-walled carbon nanotubes. Their studies, however, were restricted to diode type structures. For full gray scales and high brightness of FEDs, a triode structure is required. In this study, we present a new structure of triode type FEDs with carbon nanotube emitters, so-called under-gate triode where gate electrodes are located under cathode electrodes. Simplicity of structure and fabrication processes seems to enable the under-gate type triode structure to possess a high potential of practical applications. EXPERIMENTAL DETAILS Gate electrodes were fabricated by thin film processes, as described in the following. At first, aluminum with a thickness of 1500 was deposited on the cleaned soda-lime glass by electron beam evaporation. Gate electrodes with the 400 line width were patterned by photolithography. SiO2 was deposited by plasma enhanced chemical vapor deposition to insulate between the gate and cathode electrodes. In order to secure enough distance between gate and
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cathode electrodes, polyimide was spin-coated on the SiO2 layer at 1500 rpm. After curing at 375, 13 -thick polyimide was covered with an aluminum layer by electron beam evaporation. The aluminum cathode electrodes were patterned to form 390 wide lines by photolithography. The polyimide that covered gate pads was elimina
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