13th International Conference on Microscopy of Semiconducting Materials to be Held in Cambridge
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In the session on applications, several speakers discussed the requirements of coated conductors for devices such as transmission cables, generators, motors, fault current limiters, and magnetic-levitation systems. Coated conductors are attractive for these devices because of the potential for lower cost, low ac loss, operation at a higher temperature and higher critical current, and reduced component size. Most speakers projected that a cost of $50/kA m has to be achieved in order for coated conductors to be used in electricpower device applications. Nondestructive quality control for in situ process monitoring using Raman spectroscopy, Auger, and x-ray techniques were presented by V. Maroni (Argonne National Laboratory, USA) and L. Heatherly (Oak Ridge) in the characterization session. Use of magnetooptical imaging of the Jc distribution, coupled with reel-to-reel Ic measurements, will be ideal for the determination of bad spots in long tapes (M. Feldmann, University of Wisconsin, USA).
Transmission electron microscopy revealed several interfacial reactions in the tape. Controlling the grain-boundary chemistry is also important. M. Suenaga (Brookhaven National Laboratory, USA) said that as the critical currents of the tapes become increasingly large, the so-far neglected investigation of the cryostability of the coated conductors will also become an important issue. Y. Shiohara predicted the availability of long lengths of YBCOcoated conductors by 2006. He also predicted that there would be a crossover from BSCCO conductors to YBCO-coated conductors later in this decade. The workshop was supported by Argonne National Laboratory, IGCSuperPower, Los Alamos National Laboratory, MicroCoating Technologies (USA), Oak Ridge National Laboratory, and the University of Wisconsin. M. PARANS PARANTHAMAN, Chair AMIT GOYAL, RON FEENSTRA, TERUO IZUMI, AND VENKAT SELVAMANICKAM, Co-organizers
UPCOMING CONFERENCES
13th International Conference on Microscopy of Semiconducting Materials to be Held in Cambridge The 13th International Conference on Microscopy of Semiconducting Materials will be held at the University of Cambridge March 31–April 3, 2003. It will focus on the latest developments in the study of the structural and electrical properties of semiconductors by the application of transmission and scanning electron microscopy (TEM and SEM), scanning probe microscopy (SPM), and x-ray-based methods. The abstract deadline is December 2, 2002. The conference chairs are Tony Cullis (Sheffield University) and Paul Midgley (Cambridge University). It is sponsored by the Electron Microscopy and Analysis Group (EMAG) of the Institute of Physics, co-sponsored by The Royal Microscopical Society, and endorsed by the Materials Research Society. Conference sessions will concentrate on key topics that include state-of-the-art studies in high-resolution imaging and
analytical electron microscopy, advanced SPM and SEM applications, novel epitaxial layer phenomena, the properties of quantum nanostructures, III-nitride developments, GeSi/Si fo
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