Advances in Microscopy of Semiconducting Materials Featured at 6th International Conference
- PDF / 2,018,547 Bytes
- 2 Pages / 604.8 x 806.4 pts Page_size
- 29 Downloads / 175 Views
Advances in Microscopy of Semiconducting Materials Featured at 6th International Conférence The 6th International Conférence on Microscopy of Semiconducting Materials concentrated on the important applications of, primarily, électron microscopy and related analytical techniques to the study of the structure and properties of semiconductors. The latest in a biennial séries, the conférence took place at the University of Oxford, United Kingdom, April 10-13,1989 and attracted delegates from 20 countries. Conférence sponsorship was provided by the Royal Microscopical Society, the Institute of Physics (UK), and the Materials Research Society. The meeting was chaired by Tony Cullis (RSRE, Malvern) and John Hutchison (Oxford University). Ail major topic areas from basic research to device development were covered by the 131 scientific papers, half presented orally and half displayed as posters. Leading experts introduced individual topics with keynote invited papers. The meeting was opened by Sir Peter Hirsch (1983 MRS Von Hippel Award récipient), and the first session focused on applications of high resolution transmission électron microscopy. J. Van Landuyt (Antwerp University) demonstrated how lattice and atomic imaging could be used to characterize the finest détails of ionimplanted silicon. Topics ranged from defect structures in low-dose implanted silicon to phase formation after high-dose implantation. The session continued with papers describing advances in our understanding of compound semiconductor lattice images, the local atomic composition at interfaces and the core structure of dislocations. Impressive pictures were presented showing the atomic structure of semiconductor interfaces obtained by direct atomic-number-contrast imaging in the scanning transmission électron microscope. Advances in the study of processed silicon were covered in two other sessions. The latest techniques designed to yield atomically thin spécimens of multi-component device structures for transmission microscopy were described by R.M. Anderson (IBM, Hopewell Junction). Elégant studies of gold/silicon interfaces and oxygen précipitation in silicon were presented by R.W. Carpenter (Arizona State University), who also illustrated the use of électron energy loss spectroscopy for chemical analysis of extremely small spécimen régions. Other papers emphasized dopant profiling in silicon device structures using novel sélective etch62
/. Van Landuyt surveys advances in high resolution microscopy applications.
R. Sinclair introduces dynamic studies of înetal-silicon réactions and silicon rcgrowth.
ing procédures followed by microscopic analysis. The cross-sectional characterization of silicon-on-insulator material formed by oxygen and nitrogen ion implantation was also featured. Work on métal semiconductor contacts and silicides was of particular interest. R. Sinclair (Stanford University) presented fascinating, high resolution, dynamic studies of silitide forming reactions at metal-silicon
interfaces. Overall, there was detailed considérat
Data Loading...
