Fifth International Conference Focuses on Microscopy of Semiconducting Materials
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on epitaxial layer structures. An opening paper by W.L. Brown (AT&T Bell Laboratories, Murray Hill, NJ - 1984 MRS Von Hippel Award winner) graphically illustrated the interplay between interfacial crystallization and amorphization processes in silicon during ion bombardment. Contributed papers addressed the problems of epitaxy in both elemental and com-
J. Matsui gives a Japanese perspective on technologically important defects in bulk gallium arsenide. pound semiconducting materials systems. Topics receiving detailed consideration ranged from the m e a s u r e m e n t of layer s t r a i n by c o n v e r g e n t b e a m e l e c t r o n microscopy to studies of atomic ordering in c o m p o u n d semiconductors. There was particular emphasis on quantum well and superlattice investigations and P.M. Petroff (University of California, Santa Barbara) comprehensively demonstrated the e f f e c t s of w e l l d i m e n s i o n a l i t y a n d described the properties of specially prepared quantum wires and quantum boxes. The theme of superlattice studies was represented strongly in the paper by W.J. Bartels (Philips Laboratories, Eindhoven), where applications of x-ray diffraction methods were considered in depth. Other reported x-ray work ranged from specialized superlattice investigations to the characterization of bulk gallium arsenide and indium phosphide. Energy dispersive x-ray microanalysis in the electron microscope had been used by many workers to determine the elemental composition of samples. This and other related analytical techniques were reviewed by M.H. Loretto (Birmingham University) with a focus on the spatial resol u t i o n a n d s e n s i t i v i t y w h i c h may be achieved. The spectacular atomic resultion provided by pulsed laser atom probe analy s i s w a s d e m o n s t r a t e d by C . R . M . G r o v e n o r (Oxford University), w h o described important advances in the application of the method. A special session was devoted to the use of advanced scanning electron microscope
techniques. L.J. Balk (Duisburg University) focused on the exploitation of acoustic wave generation by the electron beam in order to characterize materials and devices. Most other papers in this area highlighted developments in electron beam induced conductivity and cathodoluminescence studies of silicon and III-V compounds. Due to the central importance of silicon device processing, many papers addressed studies of specific problems in this area. Following an overview by S.R. Wilson (Motorola Laboratories, Phoenix, AZ), contributed papers covered topics from developmental DRAM studies to the assessment of silicide epitaxy. There was particular interest in the characterization of buried dielectric layers formed, especially, by high-dose ion implantation. Electron beam t e s t i n g of finished VLSI d e v i c e s w a s reviewed by J.S. Wolcot (IBM Laboratories, Poughkeepsie, NY) and advances in testing techniques were described by a number of other authors. The advantages of laser beam testing of devices, a recently deve
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