7th International Conference on Ion Implantation Technology Held in Kyoto
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bon equipment. N.R. White (Applied Materials, formerly Genus/Ionex Corp.) capably reviewed this subject. K. Amemiya (Hitachi) spoke about microwavetype ion sources. This type of ion source is especially interesting because the source has no heater and could be used for MeV implantation by extracting mA order currents and high Charge State ions. J. Ishikawa (Kyoto University) discussed high-intensity negative-ion sources with currents of a few hundred microamps. G. Proudfoot (Culham Laboratory) discussed a very low energy ion source. The beam energy is variable from 80 eV to several hundreds of eV with total extracted beam currents up to 400 mA. H. Kaufman, originator of the Kaufmantype ion source, described a 38 cm large diameter ion source and its applications to etching processes in semiconductor fabrication. K.H. Leung (Lawrence Berkeley Laboratory), G.D. Alton (Oak Ridge National Laboratory), and N. Bacal (Ecole Polytechnique) reported on significant recent developments in several types of negative ion sources, including physics research applications. Metal ion sources are important for extending ion implantation technologies into materials science. I.G. Brown (Lawrence Berkeley Laboratory) gave an interesting invited talk on ECR (electron cyclotron resonance) and MEWA (metal vapor vacuum are) ion sources. These sources are available to obtain metallic ion species spanning the periodic table from lithium to uranium. Ion Beam Transport Finely focused ion beams, low energy ion beam extraction, and high energy and high current rf accelerators were major topics. R. Aihara (JEOL), T. Kato (Mitsubishi), and A. Wagner (IBM) gave invited talks on finely focused ion beams. Aihara detailed the characteristics of focused ion beam Systems. In the JIBL-200S, the reported stitching aecuraey and overlay aecuraey are 0.2f*m and 0.25/an, respectively. Kato described the fabrication of a GaAs FET with a mushroom gate strueture by focused ion beam lithography, and of a low noise and high gain GaAs HEMT by Be*2 and Si*2 implantation processes. P.D. Reader (Ion Tech Inc.) reviewed the development of low energy sources with extraction under a few hundied volts with large diameter. His paper was extremely relevant to technologies for both direct and enhanced ion beam deposition processes.
Ion Implantation and Ion Beam Interactions with Solids Participants in this session discussed the fundamentals of ion implantation, ionbeam spectrometries, and the application of ion implantation to semiconductor device fabrication. Evaluations of implantation damage, epitaxial processes, and diffusion were treated. WL. Brown (Bell Laboratories) covered recent important developments in ion implantation processes in semiconduetors and molecular solids. T.W. Sigmon (Stanford University) discussed solid phase epitaxial processes in heavily damaged semiconduetors. M. Aono (Riken) and Wei-Kan Chu (University of North Carolina) reported different methods of ion beam spectrometry using a low energy scattering method and a scattering reeoil eoineidence meth
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