A Comparison Between the Calculated and Experimental Effects of Enhanced Precursor Translational Kinetic Energy on SiC G
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films were grown in an uhv chamber fitted with a 1000 I/sec a General Valve series 9 pulsed valve and a custom sample allowed direct heating of the silicon substrate. The sample could be axis so that the beam impinged on the surface of the substrate at angles 263
Mat. Res. Soc. Symp. Proc. Vol. 585 ©2000 Materials Research Society
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Figure 1. Experimental Apparatus. A. HMDS reservoir. B. Access door. C. Leak valve. D. Rotation axis. E. Turbomolecular Pump. F. Shut off valve. G. Pulse valve. H. Specimen mount. I. Electrical feedthroughs. from normal incidence to glancing incidence without displacing the sample from its original position in front of the beam valve. The substrate temperature was monitored with an infrared pyrometer. All samples were grown at 1050 EC; heating was by a direct current passed through the approximately 30 x 8 x 0.5 mm silicon specimens through the long axis (6-8 amperes). Typical parameters during growth were 5x 10:4 Torr chamber pressure, on time for the valve 2 ms, 49 ms closed; 6 hrs growth time. The samples grown at large incident angles showed thickness variations from edge to edge, all are below the threshold for thickness measurement by IR interference,
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