A Kinetic Model of Silicon Nanocrystal Formation
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ORIGINAL PAPER
A Kinetic Model of Silicon Nanocrystal Formation Sergey V. Bulyarskiy 1
&
Vyacheslav V. Svetukhin 2
Received: 26 June 2020 / Accepted: 8 September 2020 # Springer Nature B.V. 2020
Abstract Silicon nanocrystals (SiNC) in silicon oxide is a promising material for many applications in micro- and nanoelectronics. This article develops a theory of the kinetics of SiNC formation with the both diffusion and reaction mechanisms of their formation being taken into account. The theoretical expressions obtained for the nanocrystals concentration change and silicon implanted in oxide and their sizes are consistent with experimental results and can be used to optimize the technological processes conditions of SiNC formation. Keywords Silicon nanocrystals . Formation kinetics . Formation conditions . Nanocrystal radius
1 Introduction In recent years, a new approach has been successfully developed to modify the properties of semiconductors, which is based on the formation of their nanocrystals. The review [1] makes it possible to understand the great prospects for using silicon nanocrystals (SiNC), which are associated with the control of the band gap of the nanocrystal when its dimensions change and additional possibilities when the nanocrystal is doped with boron or phosphorus. Among them, Si-NC in the matrix of silicon oxide are. SiNCs expand the application of silicon in the sensor industry, solar energy, and silicon photonics [2, 3]. Their use is growing in several broad fields such as microelectronics [2, 3], photonics [4], non-linear optics, secure communications [5], photovoltaics, in the socalled third-generation solar cells, solar fuels [6–11], thermoelectrics [12–14] and biomedicine [15, 16]. SiNCs are already employed by microelectronic industries in order to facilitate the integration of these nanostructures in functional microelectronic devices [17].
* Sergey V. Bulyarskiy [email protected] 1
Institute of Nanotechnology of Microelectronics of the Russian Academy of Sciences, Moscow, Russia
2
Scientific-Manufacturing Complex “Technological Centre”, Zelenograd Moscow, Russia
There are various methods for producing SiNC, but one of them is the ion doping of silicon oxide with silicon [18, 19]. Silicon atoms are introduced into the silicon oxide matrix during ion doping, then the resulting material is annealed and SiNCs are formed within the oxide volume, which we can call a “matrix”. Thus, the process of SiNC formation occurs during annealing. There are other technologies that are carried out according to the same scheme with the same finale, for example, annealing of artificial SiO/SiO2 superlattices in the substoichiometric oxide film obtained by vapor deposition [20]. As a rule, clusters and nanocrystals formation occurs as a result of the decomposition of a supersaturated solid solution in a semiconductor [21–23]. A solid solution super-saturation is proceeding when an impurity concentration in the matrix is exceeding the solubility limit at given temperature. This decomposition leads to
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