A light-influenced memristor based on Si nanocrystals by ion implantation technique
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A light-influenced memristor based on Si nanocrystals by ion implantation technique Rui Zhang1,2,* , Yaoxin Yuan1, Jianfeng Zhang1, Wenbin Zuo3, Yi Zhou1, Xinli Gao1, Wei Wang4, Zhenxing Qin1, Qingmei Zhang1,2, Fenghua Chen1,2, Xiujuan Du1, and Jinhong Li1 1
Department of Physics, Taiyuan University of Science and Technology, Taiyuan 030024, China Laboratory of Magnetic and Electric Functional Materials and the Applications, The Key Laboratory of Shanxi Province, Taiyuan 030024, China 3 Key Laboratory of Artificial Micro- and Nano-Materials of Ministry of Education and Accelerator Laboratory, School of Physics and Technology, Wuhan University, Wuhan 430072, China 4 School of Mathematics and Physics, Hebei University of Engineering, Handan 056038, China 2
Received: 5 June 2020
ABSTRACT
Accepted: 29 September 2020
We fabricated light-influenced resistive random access memory (RRAM) based on Si nanocrystals (NCs) with a configuration of Au/Si NC@SiO2/Si device by ion implantation. The Si NCs were self-assembled synthesized through the Si ion implantation into the SiO2/Si substrates followed by thermal annealing process. The resistance states of the Au/Si NC@SiO2/n-Si devices can be regulated by electric field and light irradiation, which can be distinguished and evaluated by the photoluminescence spectra. It was speculated that a series of SiOx (x B 2) nanoinclusions were bridged by more conductive oxygen vacancies, incorporating with Si NCs to form the continuous conductive pathway. Besides, the forming Si NCs and electrons from the substrates play key roles in the formation of the conductive filaments. The light-influenced resistive switching memory based on the implanted Si NCs provides the possibility to integrate the light and electric fields into integrated circuits in the future.
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Springer Science+Business
Media, LLC, part of Springer Nature 2020
Introduction Memristive behavior has attracted widespread attention due to the potentials for the next generation of nonvolatile memory, such as multi-value storage, high storage density, reversible switching and fast Handling Editor: Kevin Jones.
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https://doi.org/10.1007/s10853-020-05402-y
operation speed, to replace the current flash memory technology. Recently, resistive switching behavior has been observed in many binary oxides, such as SiO2, TiO2, ZnO, NiO, which promote the development of the resistive random access memory (RRAM) [1, 2]. The RRAM based on the simplest dual-terminal electrical resistance switching is beneficial to its fast
J Mater Sci
switching speed, low power consumption, and high integration by three-dimensional stacking [2]. The modulation between high resistance states and low resistance states is realized by applying an external electric field or current. Accordingly, the storage information is recorded as ‘‘0’’ and ‘‘1,’’ respectively. One of the most typical resistive switching mechanisms arises from the formation/rupture of conductive filament when a positive/negative
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