A low-temperature bonding method for high power device packaging based on In-infiltrated nanoporous Cu
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A low‑temperature bonding method for high power device packaging based on In‑infiltrated nanoporous Cu Chunjin Hang1 · Jiahao Liu2 · Jianqiang Wang2 · Xing Fu3 · Hongtao Chen2 · Mingyu Li2 Received: 24 March 2020 / Accepted: 8 July 2020 © Springer Science+Business Media, LLC, part of Springer Nature 2020
Abstract With the rapid development of the third-generation semiconductor materials, an appropriate high-temperature-resistant die attach material has become one of the bottlenecks to fully exploit the excellent properties of the third-generation semiconductor power devices. At the same time, a low-bonding temperature is always the pursuit goal of packaging engineers to reduce the thermal residual stress in electronic devices. In this paper, a low-temperature bonding method was proposed to address the above-mentioned issue based on In infiltrating the nanoporous Cu. In, as a low melting point metal, can significantly reduce the bonding temperature, and the nanoporous Cu structure can provide a very large specific surface area, which greatly increases the consumption rate of In. Furthermore, the formed Cu-In IMCs with high-remelting temperature can withstand the high operating temperature. The microstructures of the bondlines before and after bonding were studied in detail. The results show that the bondline can completely consume the low melting point In, within 10 min at 165 °C under a pressure of 0.75 MPa. When the bonding temperature was further increased to 310 °C, the bondline was composed of η-Cu2In and δ-Cu7In3 phases, whose melting points were more than 600 °C. The average electrical resistivity was determined to be 5.53 ± 0.65 μΩ cm, and the thermal conductivities were 144.33 W m−1 K−1, 139.24 W m−1 K−1 and 129.79 W m−1 K−1 at 30 °C, 150 °C and 300 °C, respectively. The average shear strength were 19.09 ± 3.4 MPa, 20.47 ± 4.6 MPa and 30.73 ± 5.2 MPa at 30 °C, 250 °C, 310 °C, respectively. These results indicate that the nanoporous Cu infiltrated with In could meet the requirements of electrical, thermal conduction, and mechanical support as a die attachment for high-power devices.
1 Introduction Power electronic devices play a critical role in EV (electrical vehicle), HEV (hybrid electrical vehicle), transportation electrification, renewable energy, smart grid, photovoltaic power system, and other emerging industrial applications [1–3]. High power density and high efficiency have always been the goal of the pursuit of power electronics. As a consequence, power devices are subject to extremely high local * Xing Fu [email protected] * Hongtao Chen [email protected] 1
State Key Lab of Advanced Welding and Joining, Harbin Institute of Technology, Harbin 150001, China
2
Department of Materials Science and Engineering, Harbin Institute of Technology, Shenzhen 518055, China
3
China Science and Technology On Reliability Physics and Application of Electronic Component Laboratory, Guangzhou 510610, China
heat flux (> 10 kW c m−2), and the operating temperature is getting higher and higher, som
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