A structural, morphological, linear, and nonlinear optical spectroscopic studies of nanostructured Al-doped ZnO thin fil
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A structural, morphological, linear, and nonlinear optical spectroscopic studies of nanostructured Al-doped ZnO thin films: An effect of Al concentrations Mohd Arif1, Mohd Shkir2 , Salem AlFaify2, Vanga Ganesh2, Amit Sanger3, Hamed Algarni2, Paula M. Vilarinho4, Arun Singh1,a) 1
Advanced Electronic & Nanomaterials Laboratory, Department of Physics, Jamia Millia Islamia, New Delhi 110025, India Advanced Functional Materials and Optoelectronic Laboratory (AFMOL), Department of Physics, College of Science, King Khalid University, Abha 61413, Saudi Arabia 3 School of Materials Science, Ulsan National Institute of Science and Technology, Ulsan 44919, South Korea 4 Department of Materials and Ceramic Engineering, University of Aveiro, Aveiro 3810-193, Portugal a) Address all correspondence to this author. e-mail: [email protected] 2
Received: 20 October 2018; accepted: 3 December 2018
Sol–gel spin coating is applied to fabricate the pure and different concentrations of aluminum (Al)-doped ZnO films on high-quality silicon substrates. All films are showing high crystallinity in X-ray diffraction study, and lattice constants were obtained using PowderX software. The value of crystallite size was found in range of 20–40 nm. EDX/SEM mapping was performed for 2 wt% Al-doped ZnO film, which shows the presence of Al and its homogeneous distribution in the film. SEM investigation shows nanorods morphology all over the surface of films, and the dimension of nanorods is found to increase with Al doping. The E(g)dire. values were estimate in range of 3.25–3.29 eV for all films. Linear refractive index was found in range of 1.5–2.75. The v1 value is found in range of 0.13–1.4 for all films. The v3 values are found in range of 0.0053 × 10−10 to 6.24 × 10−10 esu for pure and doped films. The n2 values were also estimated. These studies clearly showed that the properties of ZnO have been enriched by Al doping, and hence doped films are more appropriate for optoelectronic applications.
Introduction Significant research efforts have been dedicated to transparent conductive oxide (TCO) thin films of metal oxide material with increased attention in the area of emerging electronic devices such as photovoltaic devices, transparent electronic displays, photodiodes, and chemoresistive gas sensors [1, 2, 3, 4]. Since past few years, in the field of different metal oxide and conducting thin films, zinc oxide (ZnO) has been considered as a promising candidate for technological applications such as photovoltaic cells [5] and spintronics [6]. It is a recognized n-type inorganic semiconductor material from II–VI group [7] with broad energy gap and exciton energy, i.e., 3.37 eV and 60 MeV, respectively. Zinc oxide exists in several forms such as nanowires, nanoflowers, and nanosheets [8, 9, 10]. Pure ZnO thin films offers wide range of applications owing to their stability and low resistivity. However, in the literature, it is
ª Materials Research Society 2019
reported that a nonstoichiometric composition of the ZnO structure with zinc interstitials delive
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