Syntheses, Structural and Nonlinear Optical Characteristics of ZnO Films Using Z-Scan Technique
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ORIGINAL PAPER
Syntheses, Structural and Nonlinear Optical Characteristics of ZnO Films Using Z-Scan Technique B. Abdallah 1 & M. D. Zidan 1 & A. Allahham 1 Received: 7 June 2020 / Accepted: 8 September 2020 # Springer Nature B.V. 2020
Abstract ZnO films were deposited on two substrates Silicon (Si) and glass using RF magnetron sputtering. Our aim is to characterize the structural and the nonlinear optical (NLO) properties of the new ZnO films. Both of XRD and EDX analysis were utilized to reveal some information about the structural improvements and composition of our new films. Also, morphology and thickness of the films have been acquired from a scanning electron microscope (SEM). The nonlinear absorption (NLA) coefficients of the new films were estimated from the experimental data. Our observations suggest that the present grains on the films surface could be as clusters of crystallites. The optical band gaps (Eg) of the new ZnO prepared films were found about 3.25 eV for film thickness of 500 nm and 3.29 eV for the other film thickness of 1200 nm. It was found that the two films thickness have a good quality with (002) prefer orientation, as well as compared with (002) single crystal ZnO using z-scan method. The NLA coefficient (β) of the film is inversely proportional with the films thickness. Keywords Thin films . Zinc oxide . Structure properties . Z-scan . Morphology
1 Introduction ZnO is very interesting wurtzitic II-VI wide band gap semiconductor. So, it may be useful as a transparent electrodes in solar cells manufacturing [1]. It can be used in various applications, as well as a thin film transistor (TFT), and important protection element in electronic circuitry [2], piezoelectric transducer, surface acoustic wave device [3], and combined with high excitonics gain as well as large excitonic binding energy [4]. Also, new thin films were prepared by DC magnetron sputtering, it was found that the films have a corrosion resistance with high microhardness value [5]. The NLO properties of ZnO films are currently subject to specific work, in response to satisfy the industrial need for optoelectronic devices, it could be operated at a short wavelengths range [6]. Pure and doped nanocrystalline ZnO films have shown high second-harmonic efficiency and this makes the ZnO to be used as efficient optical modulator [7]. Although, a majority
* B. Abdallah [email protected] 1
Department of Physics, Atomic Energy Commission, P. O. Box, 6091 Damascus, Syria
of the optical devices depend on higher order susceptibility of the materials (χ3), ZnO as well as ZnS have been considered to be good candidate for potential optical applications in the field of nonlinear optical modulators [8] [5]. The nonlinear optical properties were measured for undoped ZnO and Mn doped ZnO thin films [9]. The percentage of the transmittance and band gap have been modified by plasma parameters (Magnetron Sputtering) such as oxygen element effect, and the thickness effect on structural and NLO properties of ZnO thin film [4] [10], as
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