A1Bi3C6 Thin Films as NO Sensors
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A1Bi3C6 Thin Films as NO Sensors Halyna Khlyap1, Violetta Bilozertseva2, Nina Dyakonenko2, Dmitrii Gaman2, Andrey Mamalui3, and Hayna M. Khlyap4 1 Physics, University of Technology, E.-Schrödinger Str.56, Kaiserslautern, -, D-67663, Germany 2 Polytechnical University, Kharkov, -, UA-61661, Ukraine 3 PolytechnicalUniversity, Kharkov, -, UA-61661, Ukraine 4 Physics, University, E.-Schroedinger-Str. 56, Kaiserslautern, 67663, Germany A1Bi3C6 Thin Films as NO Sensors ABSTRACT The paper reports experimental data on growth, morphology, NO sensitivity and electrophysical properties of A1Bi3C6 thin films obtained by means of simple vacuum technology. The investigated samples were condensed onto the glass substrates under deposition rate 0.1-0.5 nm/s at T = 300 K and vacuum level P = 10-3 Pa. AFM investigations of the film surface before and after interaction with aggressive environment demonstrated sufficient sensitivity of the film relief to the aggressive component. Room-temperature electric field-induced characteristics were investigated for metal-semiconductor (MS) Cr/NaBiTe2 structures. INTRODUCTION Bi-contained chalcogenide semiconducting materials are presenting very interesting and almost unknown field of the materials science. Thin films obtained from these compounds are non-equilibrium thermodynamic systems with various characteristics. Their structural, optical and electric properties are seemed to be of special importance for nanotechnology and nanoelectronic applications [1-4] while the simplicity of growth technology gives wide possibilities in performing structures with in-advance defined sensitive and electric properties. Earlier [1] we showed that the optical transmission coefficient of these films increases under interaction with aggressive atmospheric impurities in the spectral range 400 1200 nm. Such a property can be used for creation of gas sensors. Investigations of electric characteristics are to give additional possibilities and freedom under creating an active element of the device. Nevertheless, these characteristics were not studied previously. The paper reports for the first time experimental data on NO-sensitivity of investigated films and room-temperature electric field-induced characteristics of the corresponding metalsemiconductor structures.
EXPERIMENTAL DETAILS Bi-contained thin films were deposited onto glass substrates from Knudsen cell under vacuum level P = 10-3 Pa. The controllable shutter mechanism made it possible to obtain the films with different thicknesses (60 – 200 nm) during of one deposition cycle. The average rate of deposition was operated by change of the evaporator temperature and estimated to be
0.1-0.5 nm/s. The area of the samples was 10x30mm2, the distance between electrodes had not exceeded 30 mm. Two sets of samples were prepared: with Cr-contacts for electric studies and without them for gas sensitivity investigations. In order to examine gas sensitivity the as-grown films were placed in the closed chamber with NO concentration up to 1 mg/m3 at the
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