Laser Deposited Ag3SbS3 and Tl3SbS3 Nanoscale Thin Films as Potential Electric Field Sensors
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0951-E03-26
Laser Deposited Ag3SbS3 and Tl3SbS3 Nanoscale Thin Films as Potential Electric Field Sensors Halyna Khlyap1, Lyudmila Panchenko2, Victor Laptev3, Petro Shkumbatiuk4, and Violetta Bilozertseva5 1 Physics, University of Technology, E.-Schrödinger-Str.56, Kaiserslautern, D-67663, Germany 2 Experimental Physics, Sumy State University, Rimskii-Korsakov str.4, Sumy, UA-48650, Ukraine 3 Instutute of Physical Electronics, University of Stuttgart, Pfaffenwaldring, 47, Stuttgart, D70569, Germany 4 General Physics, State Pedagogical University, Franko str.24, Drohobych, UA-82100, Ukraine 5 General and Experimental Physics, National Technical University "KPI", Frunze-str. 21, Kharkov, UA-61002, Ukraine ABSTRACT Phase composition and electrical properties of Ag(Tl)SbS amorphous films obtained by pulse laser deposition technology are investigated. The films deposited on crystalline NaCl and Kcl substrates are amorphous with crystalline phase inclusions. Room-temperature current voltage characteristics showed a good electro-sensitivity of the films under applied bias up to 10 V and a space-charge-limited current was registered as a principal component of the charge carrier transport.
INTRODUCTION Chalcogenide semiconducting materials (in particular, Tl3SbS3 and Ag3SbS3 semiconductor compounds) are seemed to be of special interest for materials scientists and information recording specialists due to unique possibility of optical information storage by means of active elements based on corresponding thin films as well as due to almost unknown electric field-induced properties of the layers [1-4]. Moreover, the problem of choosing a proper preparation technology (our paper is focused on the pulse laser deposition technique, PLD) and the question about the phase composition of the films in connection with their electrical characteristics is almost open. The aim of the article is to describe phase composition of the PLD thin films and to show their electro-sensitivity under applied electric bias at the room temperature, which is seemed to be of special importance for protective electric field sensory. The paper is arranged as follows: Experimental details describe the technology and preparation of the structures under investigation as well as detailed description of X-ray analysis results; Discussion is focused on electric field-induced properties of the samples and possible ways of their numerical simulation; Conclusions summarize the experimental data and propose possible device applications.
EXPERIMENTAL DETAILS Ag(Tl, Sb, S)-containing single crystals were used as targets for pulse laser deposition of the investigated films. Glass and alkali halide monocrystals were used as substrates. The deposition process was carried out under vacuum level 10-3 Pa; the temperature of substrates was 300 K and 400 K. The thicknesses of the films varied from 20 to 400 nm. Nd:YAG laser under Qswitched conditions with target surface power density of 108 – 109 W cm-2 and average pulse duration of about 1 ns served as a principal part o
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