Adlayer-free large-area single-crystal CVD graphene growth on copper
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Adlayer-free large-area single-crystal CVD graphene growth on copper Chaitanya Arya1,* 1
, K. Kanishka H. De Silva1, and Masamichi Yoshimura1
Graduate School of Engineering, Toyota Technological Institute, 2-12-1 Hisakata, Tempaku, Nagoya 468-8511, Japan
Received: 8 August 2020
ABSTRACT
Accepted: 17 October 2020
Chemical vapor deposition (CVD) graphene growth on copper foil has the potential to produce high-quality graphene at the industrial scale to realize its applications in future electronics and optoelectronic devices. During the graphene growth process, various parameters such as catalytic substrate, temperature, flow rate of precursor gases (methane and hydrogen) and presence of oxygen on the Cu substrate, directly affect graphene grain size, thickness and crystallinity. Researchers have been able to achieve large-area single-crystal monolayer graphene on Cu substrate. However, small fractions of bilayer or multilayer (adlayer) regions also appear along with single-crystal monolayer graphene. In recent years, researchers have been studying the effect of various growth parameters on adlayer formation. In this review, we have discussed the role and optimization of these growth parameters to achieve adlayer-free largearea single-crystal graphene on copper foil.
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Springer Science+Business
Media, LLC, part of Springer Nature 2020
1 Introduction Graphene is a single layer of carbon atoms attached with covalent bonds and having very different characteristics from graphite [1]. It is the best-known heat conductor at room temperature along with high charge carrier mobility compared to metals in orders of magnitudes [2]. Along with these unique properties, graphene is mechanically flexible, transparent, thinnest and lightest material known till date [3]. Graphene has applications in many fields such as energy storage, sensors, transistors, memories, and flexible electronics [4] and some of the technological developments that have already been achieved include faster flash memories [5], ultrathin touched
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https://doi.org/10.1007/s10854-020-04706-8
screen [6], supercapacitors [7] and wearable electronics [8]. Currently, many techniques are available for graphene growth such as micromechanical cleavage of HOPG [9], liquid-phase exfoliation (LPE) of graphite [10], reduction of exfoliated graphene oxide [11, 12], epitaxial growth on SiC [13], and chemical vapor deposition (CVD) [14, 15]. These methods have advantages and drawbacks based on the requirements for specific applications. For electronics and optical applications, large and singlecrystal graphene is desirable with negligible defects such as grain boundaries, impurities, wrinkles and structural disorders [16, 17]. Presence of these impurities leads to a significant decrease in the device performance; hence large-sized single-crystal
J Mater Sci: Mater Electron
graphene is high in demand for electrical applications. Among all other methods to synthesize graphene, CVD has immense potential in a
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