Advanced hermetic electronic packaging based on lightweight silicon/aluminum composite produced by powder metallurgy tec
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Rare Met. DOI 10.1007/s12598-016-0833-1
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Advanced hermetic electronic packaging based on lightweight silicon/aluminum composite produced by powder metallurgy technique Yan-Qiang Liu* , Jian-Zhong Fan, Xin-Xiang Hao, Shao-Hua Wei, Jun-Hui Nie, Zi-Li Ma, Ming-Kun Liu, Ya-Bao Wang
Received: 17 October 2015 / Revised: 24 December 2015 / Accepted: 11 November 2016 Ó The Nonferrous Metals Society of China and Springer-Verlag Berlin Heidelberg 2016
Abstract Silicon/aluminum (Si/Al) composite is a kind of lightweight electronic packaging material that received a lot of attention in the past 20 years. In this paper, a series of Si/Al composites with lowered coefficient of thermal expansion (CTE) and high thermal conductivity were produced by powder metallurgy (PM). The Si/Al composites are fully dense and have fine Si particles uniquely distributed within pure Al matrix. Three 50%Si/Al composites were designed to have strength in the range of 185–290 MPa to meet different demands, while the other properties keep invariable. Fracture toughness of the composites is measured to be 9–10 MPam1/2. The composites were machined to 50%Si/Al housings and 27%Si/ Al lids. Both the hermeticities of housings before and after laser-beam-welding sealing are determined. The measured leak rate of composites and sealed housings is in magnitude order of 1 9 10-10 and 1 9 10-9 Pam3s-1, respectively, suggesting high hermeticity. The good hermeticity is attributed to the full dense materials, good weldability, and extremely low weld porosity. The present Si/Al composites are expected to be extensively used in highly hermetic electronic packages. Keywords Si/Al composite; Electronic packaging; Strength; Hermetic; Powder metallurgy
Y.-Q. Liu*, J.-Z. Fan, X.-X. Hao, S.-H. Wei, J.-H. Nie, Z.-L. Ma, M.-K. Liu, Y.-B. Wang National Engineering and Technology Research Center for Nonferrous Metals Composites, General Research Institute for Nonferrous Metals, Beijing 100088, China e-mail: [email protected]
1 Introduction The need for advanced electronic packaging materials has been widely recognized as the continuing increase in electronic packaging density companied by improvements in device and system performance. This requires the materials to have high capability for dissipating heat and prevent the devices from irreversible damages and degradations. In addition, packaging materials must have coefficient of thermal expansion (CTE) matching those of ceramic substrates and semiconductors. Besides, these materials also should be lightweight and cost-effective [1, 2]. For instance, more and more high-power GaN or GaAs chips are now used in advanced electronic devices. When high-power bare chips highly integrated in the modules, the conventionally electronic packaging materials like Kovar or Ti alloys are no longer suitable because of their poor thermal conductivity (10–40 Wm-1K-1) [1–3]. Alternatively, 55 vol%–70 vol%SiC/Al composite with density of 3.0 gcm-3 and thermal conductivity of 160–220 Wm-1K-1 was developed
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