Advances in Amorphous Silicon Integrated Photonics Science and Technology
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Advances in Amorphous Silicon Integrated Photonics Science and Technology G.P. Haladaa, Samrat Chawdaa, J. Mawyina, R.J. Tonuccib, A.H. Mahanc, C.M. Fortmann d a
Department of Materials Science and Engineering., Stony Brook University, Stony Brook, NY 11794-2275 b Naval Research Laboratory, 4555 Overlook Ave., Washington DC 20375 c National Renewable Energy Laboratory, 1617 Cole Blvd. Golden, CO 80401 d Deptartment of Applied Mathematics, Stony Brook University, Stony Brook, NY 11794-3600
ABSTRACT Over the past few years we have been developing a scientific basis for amorphous silicon-based integrated photonics technology. Waveguides using hydrogen-implanted, optically-smooth, hot-wire-deposited films have been prepared and demonstrated, and structures were characterized by Raman spectroscopy of the implanted and the non-implanted regions of the waveguide samples. The analysis is consistent with greater disorder in the film structure induced through implantation. More recently, materials prepared by femtosecond laser ablation of silicon powder have been characterized by Raman spectroscopy indicating a structure having both amorphous and crystalline components. As amorphous silicon photonics continues to evolve, the patterning of materials of differing crystallinity may become an issue of interest. INTRODUCTION Silicon-based photonics continues to advance at a high rate. Recently an Intel™ group announced the fabrication of Raman–based lasers using crystalline silicon [1]. As the technology of silicon-based light sources advances, the prospect of an all-silicon photonics technology grows. An all-silicon photonics technology will require a means for interconnecting millions of optical and opto-electronic devices on a single chip, including switches, and ever-improving light sources. Over the past few years our laboratories, with valuable assistance from many outside sources, have developed and demonstrated some key elements of an all-thin-film photonics technology including the fabrication of waveguides through hydrogen implantation of amorphous silicon [2]. Numerous investigations of lightactuated properties of hydrogenated amorphous silicon materials have also been carried out [3], [4], [5]. In this work, hydrogen-implantation-induced material and/or optical changes were further investigated. Part of the testing included Raman spectroscopy to examine the changes in the structural properties of hydrogen-implanted amorphous silicon materials. Also, an investigation into a new material preparation technique, femtosecond laser ablation, was initiated. EXPERIMENT AND MATERIALS As in much of our previous work, we primarily consider hot-wire amorphous silicon materials. These materials are appealing because the required 1-2 micron thick amorphous silicon films are deposited inexpensively and quickly [2], [6]. Also these films typically have high near-IR transparency due to low mid-gap defect concentrations as well as optically smooth surfaces [7], [8], characteristics indicating an ideal material for photonics en
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