Aging Mechanisms of InGaN/AlGaN/GaN Light-Emitting Diodes Operating at High Currents
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Aging Mechanisms of InGaN/AlGaN/GaN Light-Emitting Diodes Operating at High Currents F. Manyakhin, A. Kovalev and A. E. Yunovich MRS Internet Journal of Nitride Semiconductor Research / Volume 3 / January 1998 DOI: 10.1557/S1092578300001253, Published online: 13 June 2014
Link to this article: http://journals.cambridge.org/abstract_S1092578300001253 How to cite this article: F. Manyakhin, A. Kovalev and A. E. Yunovich (1998). Aging Mechanisms of InGaN/AlGaN/GaN Light-Emitting Diodes Operating at High Currents . MRS Internet Journal of Nitride Semiconductor Research, 3, pp e53 doi:10.1557/S1092578300001253 Request Permissions : Click here
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MRS
Internet Journal Nitride Semiconductor Research
Aging Mechanisms of InGaN/AlGaN/GaN LightEmitting Diodes Operating at High Currents F. Manyakhin1, A. Kovalev1 and A. E. Yunovich2 1Moscow
Institute of Steel and Alloys, Moscow State University,
2M.V.Lomonosov
(Received Thursday, July 23, 1998; accepted Tuesday, December 15, 1998)
Changes of luminescence spectra and electrical properties of light-emitting diodes (LED’s) based on InGaN/AlGaN/GaN heterostructures were investigated over a long period of operation. Blue and green LED’s with InGaN single quantum wells were studied at currents up to 80 mA for 102-2.103 hours. An increase of luminescence intensity at operating currents of 15 mA was detected at the 1st stage of aging (100-800 hours) and a slow fall was detected in the 2nd stage. Greater changes of spectra were observed at low currents (< 0.15 mA). A study of charged acceptor distribution in the space charge region has shown that at the 1st stage their concentration grows, and in the 2nd stage, it falls. The models for the two stages are proposed: 1) activation of Mg due to destruction of residual Mg-H complexes; 2) formation of donor vacancies N. A model of defect formation by hot electrons injected into the quantum well is discussed.
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Introduction
Various groups [1] [2] [3] [4] [5] have studied the problem of GaN-based light-emitting diode (LED) degradation in the last few years, but mechanisms of degradation are not yet understood. The goal of the present work was a research of aging processes in LED's for which luminescence and electrical properties were investigated in [6] [7] [8] [9] [10]. Preliminary results of this study were published in references [11] [12]. The experiments were done at moderately high currents, not far from the normal LED operating conditions. Changes of LED properties were observed over 102-103 hours. Models are proposed to explain these changes. 2
tra, capacitance-voltage (C(V)) and current-voltage (J(V)) characteristics were detected at 60-100 mA for hundreds of hours. A constant current J=80 mA was chosen for further experiments. The temperature of the LED's active area was e
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