All-inkjet-printed MoS 2 field-effect transistors on paper for low-cost and flexible electronics
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ORIGINAL ARTICLE
All‑inkjet‑printed MoS2 field‑effect transistors on paper for low‑cost and flexible electronics Zhi Jiang1,2 · Long Chen1 · Jin‑ Ju Chen1 · Yan Wang1 · Zhao‑ quan Xu1 · Enrico Sowade3 · Reinhard R. Baumann4 · Evgeniya Sheremet5 · Raul D. Rodriguez5 · Zhe‑ sheng Feng1 Received: 2 April 2020 / Accepted: 27 April 2020 © King Abdulaziz City for Science and Technology 2020
Abstract All-inkjet-printing of transistors has received much attention for low cost and flexible integrated circuits. However, most flexible field-effect transistors (FETs) based on the emerging two-dimensional materials suffer from the high cost of substrate and electrode materials. The requirements for high-temperature synthesis and precise control in processing add another layer of complexity. To overcome these issues, low-cost flexible paper-based MoS2 FETs were fabricated by inkjet printing of MoS2 channel materials on paper. Additionally, we proposed and achieved the mask-less and low-temperature formation of source and drain electrodes on paper using in-situ selective-area copper reduction. A low sub-threshold swing of 80 mV/ dec, high on/off ratio of 105, and very high turn-on current (Ion) of 200 μA of the paper-based flexible MoS2 FETs were demonstrated using the proposed low-cost and facile all-inkjet-printing technique. The all-inkjet-printing technique assisted by in-situ copper reduction opens new opportunities for low-cost and batch fabrication of paper-based electronic devices in ambient conditions. Keywords MoS2 · Sub-threshold swing · FETs · Nanosheets
Introduction
Electronic supplementary material The online version of this article (https://doi.org/10.1007/s13204-020-01438-3) contains supplementary material, which is available to authorized users. * Jin‑ Ju Chen [email protected] * Enrico Sowade [email protected] * Zhe‑ sheng Feng [email protected] 1
School of Materials and Energy, University of Electronic Science and Technology of China, Chengdu 610054, China
2
Institute of Fundamental and Frontier Sciences, University of Electronic Science and Technology of China, Chengdu 610054, China
3
R&D Digital Printing, Zschimmer & Schwarz Mohsdorf Gmbh & Co.kg Ltd, 09217 Burgstädt, Germany
4
Digital Printing and Imaging Technology, Technische Universität Chemnitz, 09126 Chemnitz, Germany
5
Tomsk Polytechnic University, 30 Lenin Ave, Tomsk, Russia
MoS2 is one of the emerging materials for flexible electronics because of its unique tunable bandgap (direct bandgap E g = 1.8 eV for monolayer and indirect bandgap Eg = 1.2 eV for multilayer) and mechanical stability (Chung et al. 2014; Yao et al. 2013; Kim et al. 2016). Flexible MoS2 field-effect transistors (FETs), photoelectric sensors, and logical switches were reported, showing its potential applications in wearable electronics (Alsaif et al. 2016; Kim et al. 2012; Lim et al. 2018; Das et al. 2013; Li et al. 2015a; Ziyu et al. 2018, 2019, 2020). Although few-layer MoS2 was reported to exhibit a high current on/ off ratio of 1 × 108 and
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