Synthesis of large scale MoS 2 for electronics and energy applications
- PDF / 680,586 Bytes
- 8 Pages / 584.957 x 782.986 pts Page_size
- 65 Downloads / 185 Views
Wonbong Choia) Department of Materials Science and Engineering and Department of Mechanical and Energy Engineering, University of North Texas, Denton, Texas 76207, USA (Received 1 September 2015; accepted 2 March 2016)
Layered molybdenum disulfide (MoS2) has attracted great attention owing to its unique properties. However, synthesizing large area thin film with high crystal quality and uniformity remains a challenge. The present study explores large scale MoS2 growth methods, i.e., two-step method of sputtering-chemical vapor deposition and direct sputtering method, and applies them to fabricate field effect transistors and supercapacitors, respectively. The thickness modulated MoS2 films by two-step method exhibited high field effect mobility [;12.24 cm2/(V s)] and current on/off ratio (;106). The direct sputtering of MoS2 demonstrated excellent electrochemical performance with a high capacitance (;30 mF/cm2) and cyclic stability upto 5000 cycles. Our growth methods reported here for the large scale MoS2 with high uniformity can trigger the development of several important technologies in two-dimensional materials.
I. INTRODUCTION
The demand in the high efficiency electronics and energy storage devices has compelled researchers to explore novel two-dimensional (2D) transition metal dichalcogenide materials and their fabrication techniques.1,2 Recently, 2D molybdenum disulfide (MoS2) has been intensively studied as semiconducting material analogous to graphene.3–5 Unlike graphene, MoS2 is an indirect band gap (1.2 eV) semiconductor that changes to a direct band gap (1.8 eV) when it is scaled down a single layer (SL), making it suitable for field effect transistors (FETs), photodiodes and other optoelectronic devices.6–9 Besides this, the efficient electrochemical intercalation of electrolyte ions (H1, Li1, K1) into MoS2 nanosheets together with the high surface area of 2D structure renders its use in electrochemical energy storage devices such as batteries and supercapacitors.10 There has been significant research on the production of 2D MoS2 using mechanical and chemical exfoliation methods.11–13 While these methods are useful to produce high quality MoS2 flakes, they have a poor yield and are not suitable for scalable device applications where uniform and large scale deposition is desired. Another method commonly used to grow thin film MoS2 is the vapor-phase reaction of MoO3 and S powders in Contributing Editor: Lou Jun a) Address all correspondence to this author. e-mail: [email protected] b) These authors contributed equally to this manuscript. DOI: 10.1557/jmr.2016.100 824
J. Mater. Res., Vol. 31, No. 7, Apr 14, 2016
a chemical vapor deposition (CVD) system.14 Although this technique has shown continuous film of MoS2, it often results in the formation of randomly distributed flakes rather than a continuous film. Hence, there is a big demand to grow thickness-controlled, large scale, and uniform MoS2 films. Herein, we present large scale growth of MoS2 films; two-step method of sputtering-CVD and direct sputter deposi
Data Loading...
