All inorganic quantum dot light emitting devices with solution processed metal oxide transport layers
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All inorganic quantum dot light emitting devices with solution processed metal oxide transport layers R. Vasan, H. Salman and M. O. Manasreh MRS Advances / Volume 1 / Issue 04 / January 2016, pp 305 - 310 DOI: 10.1557/adv.2016.129, Published online: 15 February 2016
Link to this article: http://journals.cambridge.org/abstract_S2059852116001298 How to cite this article: R. Vasan, H. Salman and M. O. Manasreh (2016). All inorganic quantum dot light emitting devices with solution processed metal oxide transport layers. MRS Advances, 1, pp 305-310 doi:10.1557/adv.2016.129 Request Permissions : Click here
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MRS Advances © 2016 Materials Research Society DOI: 10.1557/adv.2016.129
All inorganic quantum dot light emitting devices with solution processed metal oxide transport layers R. Vasan*1, H. Salman2, and M. O. Manasreh1 1 Department of Electrical Engineering, University of Arkansas, Fayetteville, AR, USA-72701 2 Microelectronics and Photonics program, University of Arkansas, Fayetteville, AR, USA-72701 ABSTRACT All inorganic quantum dot light emitting devices with solution processed transport layers are investigated. The device consists of an anode, a hole transport layer, a quantum dot emissive layer, an electron transport layer and a cathode. Indium tin oxide coated glass slides are used as substrates with the indium tin oxide acting as the transparent anode electrode. The transport layers are both inorganic, which are relatively insensitive to moisture and other environmental factors as compared to their organic counterparts. Nickel oxide acts as the hole transport layer, while zinc oxide nanocrystals act as the electron transport layer. The nickel oxide hole transport layer is formed by annealing a spin coated layer of nickel hydroxide sol-gel. On top of the hole transport layer, CdSe/ZnS quantum dots synthesized by hot injection method is spin coated. Finally, zinc oxide nanocrystals, dispersed in methanol, are spin coated over the quantum dot emissive layer as the electron transport layer. The material characterization of different layers is performed by using absorbance, Raman scattering, XRD, and photoluminescence measurements. The completed device performance is evaluated by measuring the IV characteristics, electroluminescence and quantum efficiency measurements. The device turn on is around 4V with a maximum current density of ~200 mA/cm2 at 9 V. INTRODUCTION Colloidal quantum dot light emitting devices (QLED) were recently investigated as a replacement for the existing organic light emitting devices (OLED). The advantages of QLED include high color purity and saturated emission, environmentally stable and low power operation over OLED [1-9]. Based on the type of transport materials used, the QLEDs are classified as organic, hybrid and inorganic devices [1]. The efficiency of organic and hybrid
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