Aminobenzene stabilized bismuth halide nanoparticles with O- shaped hysteresis behaviour
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Aminobenzene stabilized bismuth halide nanoparticles with O-shaped hysteresis behaviour Venkata K Perla1, Sarit K Ghosh1, and Kaushik Mallick1,* 1
Department of Chemical Sciences, University of Johannesburg, P.O. Box: 524, Auckland Park 2006, South Africa
Received: 10 August 2020
ABSTRACT
Accepted: 27 October 2020
A single pot synthesis method of aminobenzene stabilized bismuth iodide particles (ABBI) is reported for the nonvolatile random access memory application. The microscopic and surface property of the as-synthesized organicinorganic hybrid system has been characterized using different techniques. The current-voltage characteristic of the device, made with ABBI, exhibited Oshaped hysteresis behaviour. For the random access memory application, the device was demonstrated the steady endurance and retention for 103 times and 29103 sec, respectively. The charge transport property of the device was followed by space charge limited current and trapped assisted tunneling mechanism.
Springer Science+Business
Media, LLC, part of Springer Nature 2020
1 Introduction Hybrid organic-inorganic systems, with unique electronic and optical properties, make them suitable for various applications, such as transistor [1], photodetector [2], light-emitting diode [3], energy storage [4], dielectric and charge storage [5], chemical and biosensor [6, 7], organic transformation reaction [8], photocatalysis [9] and non-volatile memory device [10]. The research on retentionmemory devices, with a faster switching speed and better endurance, has attracted enormous attention due to the emerging demand for the consistent, secure and cost-efficient ways of storing and managing information. Resistive switching memory is a non-volatile, random-access computer memory that works by shifting the resistance between high conductive state and low conductive state across a dielectric material and a
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https://doi.org/10.1007/s10854-020-04777-7
fascinating alternative, among many substitutes, due to its low power intake, scalability and simplistic assembly process. Many materials with resistive switching phenomenon have been investigated including transition metal oxides [11], perovskite oxides [12] and organic compounds [13]. The device made with organic polymer stabilized metal nanoparticles has been reported for non-volatile memory behaviour with high ON-OFF ratio [14, 15]. Recently, halide perovskites-based memory devices have attracted considerable interest due to their unique current-voltage hysteresis behaviour, which is originated from the ion or defect migration [16] and exhibit multilevel data storage, good mechanical flexibility and light sensitivity [17]. Report has been published on lead halide perovskite (CsPbI3)-based memory device, sandwiched between silver and ITO electrode,
J Mater Sci: Mater Electron
formed silver iodide layer, due to the reaction between the active Ag electrode and I-, which exhibited a non-volatile, bipolar resistive switching behavior with high O
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