Amorphous, Silicide, and Crystalline Fe Films Grown on Si(001) by Radio-frequency Magnetron Sputtering
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Amorphous, silicide, and crystalline Fe films grown on Si(001) by radio-frequency magnetron sputtering J. H. Jea) Department of Materials Science and Engineering, Pohang University of Science & Technology, Pohang, Korea
H. K. Kim Department of Physics, Pusan University, Pusan, Korea
D. Y. Noh Department of Materials Science and Engineering and Center for Electronic Materials Research, Kwangju Institute of Science & Technology, Kwangju, Korea (Received 19 February 1998; accepted 2 October 1998)
The microstructure of the amorphous, silicide, and crystalline Fe films grown on Si(001) substrates by a radio-frequency (rf) magnetron sputtering was studied in synchrotron x-ray scattering experiments. During the growth, iron-silicide interlayers were always formed. The silicide interlayer became crystalline b –FeSi2 at high rf power (>20 Wycm2 ) and at the substrate temperature of 100 ±C. The formation of the b –FeSi2 was also promoted by postannealing to 300 ±C. The Fe films grown on top of the silicide interlayer were amorphous at low substrate temperatures (
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