Antimony Sulfide Thin Films Obtained by Chemical Bath Deposition using Tartaric Acid as Complexing Agent
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MRS Advances © 2018 Materials Research Society DOI: 10.1557/adv.2018.551
Antimony Sulfide Thin Films Obtained by Chemical Bath Deposition using Tartaric Acid as Complexing Agent J. Escorcia-García1, M. Domínguez-Díaz2, A. Hernández-Granados3, and H. Martínez2 1
CONACYT-CINVESTAV del IPN, Unidad Saltillo, Av. Industria Metalúrgica 1062, Parque Industrial, Ramos Arizpe 25900, Coahuila, México.
2
Instituto de Ciencias Físicas-UNAM, Av. Universidad 1001, Cuernavaca 62210, Morelos, México.
3
Centro de Investigación en Ingeniería y Ciencias Aplicadas-UAEM, Av. Universidad 1001, Cuernavaca 62209, Morelos, México.
The deposition of uniform, reproducible and compact Sb 2S3 thin films were obtained by chemical bath deposition using tartaric acid as a complexing agent. It was found that the thickness of the films increases with the pH of the solution, reaching values of 130 and 170 nm for pH values of 9.5 and 10, respectively. XRD, as well as Raman analysis, showed amorphous Sb2S3 films formed directly from the chemical bath, which crystallized into stibnite after a thermal treatment in N2 with crystallite sizes between 31 and 39 nm. On the other hand, the optical band gap of the Sb 2S3 films decreased with an increase in pH, with values of 1.82-2.03 eV for the crystalline ones. An n-type photo-conductivity of 10-6 Ω-1 cm-1 was obtained for the heated films. The evaluation of these films for solar cell applications using CdS as the window layer gave a Voc of 656 mV and a Jsc of 2.66 mA/cm2 under AM1.5G radiation.
INTRODUCTION In recent years the search for alternative chalcogenide materials and novel configurations of photovoltaic devices have been carried out intensively to develop a new technology of solar cells composed of abundant elements that are low-expensive, non-toxic and friendly with the environment. Among these materials one can find SnS, SnSe, PbS, Sb2S3, Sb2Se3, Cu2S, and so on. Antimony sulfide (Sb 2S3) is a semiconductor material with interesting optoelectronic properties such as a photo-conductivity of 10-810-6 Ω-1 cm-1, an optical band gap, Eg, of 1.5-1.8 eV, and a strong optical absorption in
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the UV-Vis region (>104 cm-1) [1,2]. These properties have let Sb2S3 be used as absorber in the development of thin film- [1,3,4], hybrid- [5], and semiconductor-sensitized solar cells (SSSCs) [6], reaching power conversion efficiencies (η) above 5% [6,7]. However, it exhibits high recombination due to its poor crystallinity and intrinsic defects [8]. This undesirable effect is more evident when chemical processes are used instead of physical ones. Nevertheless, the chemical processes such as chemical bath deposition (CBD) offer the advantages of low-temperature deposition at atmospheric pressure without expensive infrastructure. To improve the quality of the Sb2S3 films by CBD, th
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