Characterization of PbS thin films obtained by chemical bath at low temperature using sodium citrate as complexing agent
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Characterization of PbS thin lms obtained by chemical bath at low temperature using sodium citrate as complexing agent David Ramírez-Ceja, Luis A. González, José Escorcia-García and Arturo I. Martínez-Enríquez MRS Advances / FirstView Article / July 2016, pp 1 - 6 DOI: 10.1557/adv.2016.398, Published online: 23 May 2016
Link to this article: http://journals.cambridge.org/abstract_S2059852116003984 How to cite this article: David Ramírez-Ceja, Luis A. González, José Escorcia-García and Arturo I. Martínez-Enríquez Characterization of PbS thin lms obtained by chemical bath at low temperature using sodium citrate as complexing agent. MRS Advances, Available on CJO 2016 doi:10.1557/adv.2016.398 Request Permissions : Click here
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MRS Advances © 2016 Materials Research Society DOI: 10.1557/adv.2016.398
Characterization of PbS thin films obtained by chemical bath at low temperature using sodium citrate as complexing agent David Ramírez-Ceja, Luis A. González, José Escorcia-García and Arturo I. Martínez-Enríquez Centro de Investigación y de Estudios Avanzados del IPN, Unidad Saltillo, Av. Industria Metalúrgica 1062, Parque Industrial, Ramos Arizpe 25900, Coahuila, México. ABSTRACT The deposition of PbS thin films by the chemical bath deposition method using sodium citrate as non-toxic complexing agent is presented. As-deposited PbS films and those annealed at 200 and 300 °C in argon atmosphere were formed by tightly compact spherical particles homogeneously distributed along the substrates. The XRD analysis shows that all the films had a galena type cubic crystalline structure. The crystallite size of the as-deposited film was 17 nm which decreased to 14 nm when the film was annealed to 300 °C. Thermal treatments to the films produced a shift of the optical band gap from 1.34 to 1.49 eV. Furthermore, the asdeposited PbS films were photosensitive showing a conductivity of 10-2 Ω-1 cm-1 under illumination. Such a conductivity increased to 10-1 Ω-1 cm-1 with the thermal treatment at 200 °C. The evaluation of the PbS film using a CdS thin film partner as window in the solar cell configuration showed an open circuit voltage of 88 mV and a short current density of 3.5 mA/cm2. INTRODUCTION Absorbing layers in the actual photovoltaic devices, which are capable to efficiently transform the light into electricity in the visible range, are mostly made of materials such as Indium (In), Tellurium (Te) and Gallium (Ga). The devices made with these materials have exhibited efficiencies from 17.5 to 28.8% [1]. However, these materials are non-abundant and highly expensive whereby the satisfaction of the energy demand in the future is compromised [2]. In order to have a successful development it is necessary to return to abundant materials like lead sulphide (PbS). PbS has been widely investigated as an absorber material in
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