Novel SnSb 2 S 4 Thin Films Obtained by Chemical Bath Deposition using Tartaric Acid as Complexing Agent for Their Appli
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MRS Advances © 2019 Materials Research Society DOI: 10.1557/adv.2019.307
Novel SnSb2S4 Thin Films Obtained by Chemical Bath Deposition using Tartaric Acid as Complexing Agent for Their Application as Absorber in Solar Cells L.A. Rodríguez-Guadarrama1, I.L. Alonso-Lemus2, J. Campos-Álvarez3, and J. EscorciaGarcía4 1 Sustentabilidad de los Recursos Naturales y Energía, CINVESTAV Unidad Saltillo, Av. Industria Metalúrgica 1062, Ramos Arizpe 25900, Coahuila, México.
2
CONACYT, Sustentabilidad de los Recursos Naturales y Energía, CINVESTAV Unidad Saltillo, Av. Industria Metalúrgica 1062, Ramos Arizpe 25900, Coahuila, México.
3
Instituto de Energías Renovables, UNAM, Priv. Xochicalco S/N, Temixco 62580, Morelos, México.
4 CONACYT-CINVESTAV, Unidad Saltillo, Av. Industria Metalúrgica 1062, Ramos Arizpe 25900, Coahuila, México.
ABSTRACT
Ternary Sn-Sb-S thin films with remarkable optical, electrical and structural properties were developed by chemical bath deposition. Tin and antimony chlorides and thioacetamide were used as tin, antimony, and sulfur ion sources, respectively, while tartaric acid was used as a complexing agent. XRD analysis of as-deposited films showed a combination of binary phases of SnS, Sn2S3, and Sb2S3, while after thermal treatment in nitrogen at 400 °C, the films became crystalline showing well-defined reflections of the ternary SnSb2S4. The heating also influenced the morphology, compactness, and thickness of the films. On the other hand, all the films showed an absorption coefficient higher than 104 cm-1, while the optical band gap of the as-deposited film decreased from 1.49 to 1.37 eV after heating at 400 °C. In addition, the photoconductivity of the films prior to heating was of 10-9 Ω-1 cm-1, while after that at 400 °C was of 10-7 Ω-1 cm-1. The evaluation of the ternary film in solar cells gave an open-circuit voltage Voc of 448 mV and short-circuit current density of Jsc of 2.4 mA/cm2.
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1. INTRODUCTION In recent years, photovoltaic solar energy has become a promising source of electricity, in particular, it has been promoted the development of thin film solar cells due to their low-weight, flexibility, low consumption of raw materials, and low-cost production [1, 2]. Recently, thin films of ternary Sn xSbySz such as SnSb2S4 and Sn2Sb2S5 have been found attractive to use them as absorber layers in solar cells, since they have a high absorption coefficient (≈105 cm-1) with optical band gaps of 1.42-2.11 eV. Besides, these materials are abundant and non-toxic [3, 4]. Recently, physical techniques such as thermal evaporation [2, 5, 6] and sputtering [4,7] have been used for the synthesis of ternary SnxSbySz films. However, these techniques use expensive, complex, and high energy consumption processes. In this work, thin films of ternary SnSb2S4 (TAS) co
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