Ar Ion Irradiation Effects on the Characteristics of RuPt n -GaN Schottky Barrier Diodes
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HYSICS OF SEMICONDUCTOR DEVICES
Ar Ion Irradiation Effects on the Characteristics of Ru|Pt|n-GaN Schottky Barrier Diodes S. Kumara, V. Kumar Mariswamyb, A. Kumarc, A. Kandasamic, A. Nimmalad, S. V. S. Nageswara Raod,e, V. Rajagopal Reddyf, and K. Sannathammegowdaa,* a Department
of Studies in Physics, Manasagangotri, University of Mysore, Mysuru, 570006 India Department of Physics, K L E Society’s R L S Institute, Belagavi, 590001 India c Inter-University Accelerator Centre (IUAC), New Delhi, 110067 India d Centre for Advanced Studies in Electronics Science and Technology (CASEST), School of Physics, University of Hyderabad, Hyderabad, 500046 India e School of Physics, University of Hyderabad, Hyderabad, 500046 India f Department of Physics, Sri Venkateswara University Tirupati, Tirupati, 517502 India *e-mail: [email protected] b
Received July 28, 2020; revised July 28, 2020; accepted August 13, 2020
Abstract—The present study reports the effects of 650-keV Ar2+ ion irradiation on the structural, optical, and device characteristics of Ru|Pt|n-GaN Schottky barrier diodes (SBDs). Ion irradiation induces the broadening of the GaN X-ray diffraction peaks due to induced structural deformities. The photoluminescence spectroscopy intensity decreases with the increase in the fluence of ions. The recombination of charge carriers induced by the geometrical distortions, and the formation of defects states, shifts the peak positions to shorter wavelengths. The electrical characteristics of these devices exhibit significant changes due to modification at the interface and charge transport properties after Ar2+ ion irradiation. The charge-transport properties are affected by these deformities at higher fluences and attributed to the contributions of various current conduction mechanisms, including defect-assisted tunnelling and generation–recombination (G–R) currents along with thermionic emission. Keywords: GaN SBDs, electrical parameters, ion irradiation, current conduction mechanisms DOI: 10.1134/S1063782620120155
1. INTRODUCTION Over the last few decades, GaN has become one of the fascinating compound semiconductor material for researchers in the field of device-fabrication technology due to its unique properties like large and direct energy bandgap, high melting point, high chemical resistance, and good thermal conductivity [1–4]. These properties make GaN a potential material of modern electronic devices for various applications such as amplifiers, dynamic switches, detectors, lasers, solar cells, transistors for terahertz plasma applications, diodes, including the devices that are reliable in radiation-rich environments [1–3, 5–9]. Low-energy ion irradiation is an effective technique for customizing materials and devices containing semiconductors. These ions, however, introduce electrically active defects that modify the properties of semiconductor material and thus alter the characteristics of the devices fabricated on it [6, 10–14]. Another advantage of low-energy ion irradiation is to test the reliability
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