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Amorphous and Liquid Semiconductors Edited by B. K. Chakraverty and D. Kaplan (Journal de Physique, Supplement FASC 10) This volume contains the proceedings of the Ninth International Conference on Amorphous and Liquid Semiconductors, held in Grenoble, France, 1981. The 250 papers constitute a useful survey of the international scientific community's efforts in the growing area of amorphous and liquid semiconductors. The book is divided into two parts. The first half deals with topics of general interest. Theoretical aspects of localization and transport are discussed in the first two symposia. Two symposia are devoted to physical characteristics of the materials, discussing structure and stability and recent work in microcrystalline films. Other symposia deal with optical and vibrational studies, and the related topic of mestastable states. Finally, this section presents various characterization methods, including device studies, transient behavior, and gap state measurements. The second half of the book presents papers of more specific interest. The first symposium covers material preparation, and most of the work presented deals with amorphous silicon deposition. This is followed by several symposia each covering specific materials studies. Among others, these include silicon, group V and III-V compounds, and chalcogenides. Overall, the range of topics covered in these proceedings is representative of the level of activity in each area of amorphous and liquid semiconductors. About half the papers deal with amorphous silicon, indicating its increasingly dominant technological significance. Other fields of investigation are well represented, as are various lines of theoretical study. Reviewer: R. C. Frye is a member of the technical staff (it AT&T Bell Laboratories in Murray Hill, Nj. He lias researched amorphous ami polycrystalline semiconductors, and maintains an interest in the application of these materials.
Pulsed Laser Processing of Semiconductors Edited by R.F. Wood, C.W. White and R.T. Young {Academic Press, 1985) This book is the newborn volume in the successful field of laser annealing. As stated by the editors this is a mono-laboratory book with all the advantages and disadvantages of such an arrangement. For example, repetition from chapter to chapter is minimized. The book is well organized into 10
chapters, the first one giving a broad overview of laser processing. Segregation and solute trapping phenomena are smoothly summarized in Chapter 2. The excellent review of optical and electrical properties in Chapter 3 also provides a good amount of valuable numbers for those interested in a quantitative evaluation of such parameters. The next two chapters are questionable: they detail the point of view of the chapter authors but give very little or no space to other interpretations of the described processes. For example, the formation of a fine polycrystalline layer at the bottom of a large polycrystalline layeras a consequence of partial melting of amorphous silicon is interpreted only in terms of nuc
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