Book Reviews
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The Science of Crystallization: Microscopic Interfacial Phenomena
W.A. Tiller (Cambridge University Press, 1991, 391 pages). ISBN: 0-521-38827-9 (paperback); 0-521-38138x (hardback)
The Science of Crystallization: Macroscopic Phenomena and Defect Generation
W.A. Tiller (Cambridge University Press, 1991, 484 pages). ISBN: 0-521-38828-7 (paperback); 0-521-38139-8 (hardback)
These books are the outcome of four decades of work by the author, working at the leading edge of crystallization research both in industry and academia. Their declared aim is to serve as teaching texts rather than as scientific treatises, and through the two volumes they build up a thorough understanding of the myriad interwoven processes involved in crystal formation and growth, whether natural/ geological or manufactured. The volumes may be used together or singly; the second volume on macroscopic phenomena provides an introductory chapter summarizing the main principles carried forward from its predecessor on microscopic phenomena. Both volumes are provided with a comprehensive list of the symbols used and their definitions to support the analytical approach. The volume on microscopic phenomena is composed of two parts. The first deals with the underlying science of interfacial phenomena involved in all crystallization processes, including interfacial energetics and molecular attachment, ledge and trapping effects, interfacial solute partitioning, and thin-film formation via vapor deposition. The second part treats the thermodynamics of bulk phases and interfaces, and the principles of reaction kinetics and of nucleation phenomena. The volume on macroscopic phenomena has two parts, the first containing chapters on convection and heat transfer, steadystate and transient solute partitioning, morphological stability, and interface morphologies. These lead to the second part, containing chapters on defect formation during both bulk and thin-film growth. The earlier chapters in both volumes deal with basic principles and conclude with problems designed to lead students to a quantitative understanding of the phenomena involved and help them learn to make useful quantitative appraisals. Although the principles and phenomena de-
scribed in the two volumes are widely applicable, the author applies them, wherever possible, to the processing of silicon, with less frequent references to other materials (such as compounds and metals) for contrast and breadth. The books should particularly interest those involved in semiconductor processing and solid-state electronics, although they are evidently intended to be used primarily as texts for the relevant advanced courses in chemistry, chemical engineering, materials science, metallurgy and geology, as well as electrical and electronic engineering and solidstate physics. The range of the material certainly exceeds that covered by any previous text in the field, and the approach is distinctive. These books should definitely be on the shelves of every library where teaching and research on crystallization ar
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