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Applications of Multiquantum Wells, Sélective Doping, and Superlattices (Semiconductors and Semimetals, Volume 24) Edited by Raymond Dingle (Académie Press, 1988)
Récent progress in semiconductor nanometer growth technology has made possible the fabrication of devices with atomic-scale ultrathin layers. In thèse structures électrons are confined to régions comparable to their de Broglie wavelength and thus quantum mechanical effects are observable. Since the simplest model of their behavior is that of a particle in a onedimensional box, the terms "quantum wells," or "superlattices" for the periodic versions, are used to describe thèse structures. The first proposai of the concept of the semiconductor superlattice was by L. Esaki in 1970. The field is still growing rapidly, influencing both fundamental physics and device technology. In particular, the démonstration of improved performance by the modulation-doped high électron mobility transistor (HEMT) and by the quantum-well laser stimulated much investigation of various issues needed to understand the behavior of thèse devices. The successful évolution of this field was also supported by concurrent and dramatic improvements in the growth technologies, especially molecular beam epitaxy and metal-organic vapor phase epitaxy. Due to the field's continuing rapid growth, it is impossible to summarize ail the important developments in one volume. R. Dingle, one of the original inventors of the high électron mobility transistor, has instead chosen to focus on some of the most significant topics of clear and enduring importance. The book's 13 authors are among the leading pioneers in the field. The chapters they hâve written are oriented to providing an introduction to the basic concepts of each topic. Because of this, the volume is still timely and useful, even though the material is a few years old. The book is divided into four parts. The first, a single chapter by C. Weisbuch (Thomson-CSF), describes and summarizes the basic phenomena occurring in the various material Systems, including the optical and electronic properties of the various structures. It provides an excellent foundation for the subséquent chapters. The second part, chapters two through four, focuses on electronic devices and circuits based on the quantum well, the superlattice, and the single selectively doped
MRS BULLETIN/DECEMBER1989
heterostructure interface. The areas covthe overview as well as the chapters on siliered include device physics, microwave con epitaxy, low-pressure CVD, plasmaapplications, and the HEMT-integrated cirassisted CVD, ECR, and in particular, cuit. The authors are H. Morkoc (Illinois) et molecular beam epitaxy emphasize the al., N.T. Linh (Picogiga), and Abe (Fujitsu) spirit of the title and the table of contents of et al., respectively. the book. The next three chapters focus on the génA few of the chapters, however, do not ération and détection of light using single meet the level of a handbook. The chapters (SQW) or multiple quantum well (MQW) on sputtering and ion bea
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