Book Reviews
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Plasma Processing for VLSI Edited by: N. G. Einspruch and D. M. Brown (Volume 8 of VLSI Electronics Microstructure Science, edited by N. G. Einspruch, 1984, Academic Press) Plasma Processing for VLSI is an excellent resource for anyone interested in this topic. After a brief summary of the development of the field (D. L. Tolliver), the book is divided into three major sections: 1. Deposition: articles on metal and dielectric sputtering (R. S. Nowicki), PECVD of metals and silicides (D. W. Hess) and of dielectrics (T. B. Gorcyzca and B. Gorowitz). 2. Lithography: articles on trilayer resist (J. B. Kruger, M. M. O T o o l e , and P. Rissman), plasma sources for x-ray (D. J. Nagel) and for deep UV (A. N. Petelin and M. q . Ury). 3. Etching (more than half the book): articles on the basic principles (D. L. Flamm, V. M. Donnelly, and D. E. Ibbotson), highpressure etching (D. L. Smith), RIE (B. Gorowitz and R. J. Saia), ion beam milling (R. E. Lee), RIBE (B. A. Heath and T. M. Mayer), plasma diagnostics (W. R. Harshbarger), emerging dry etch techniques, (Y. Horiike), and the application of dry etch to advanced device structures (T. P. Chow). Although the organization is interesting, I might suggest that if the reader is not actively involved in plasma processing he might augment the historical introduction with a technical one. Chapter 7 of Glow Discharge Processes (B. Chapman, John Wiley 1980), or one of the many fine review articles by J. W. Coburn are well suited for this purpose. The article on sputtering is a brief but worthwhile review which lends perspective to the chapters on PECVD. The trilevel article is excellent but the contributions about x-ray and deep UV sources, although clearly written, seem misplaced in a book about processing. Perhaps a review of the progress in fully dry developable resists and/or plasma stability of resist materials (with some chemistry) would be a more natural fit in the lithography section. The main part of Volume 8 deals with dry etching. It starts with a thorough review (Flamm, et al.) and ends with an intriguing chapter about advanced applications (Chow). The organization and quality of the contributions to this section cannot be faulted. Although there is an excellent article on emerging techniques (Horiike), I feel that a few additional topics might deserve extended treatment: electron cyclotron resonance low voltage high current plasma sources, as well as a chapter on radiation damage and polymeric contamination. In summary, the material in Volume 8 is important and well presented. The omission
P A G E 2, M R S BULLETIN, J A N U A R Y / F E B R U A R Y 1 9 8 6
of certain topics is not a serious drawback; plasma processing is a rapidly advancing technology and the format of the "VLSI Electronics" series would certainly allow for inclusion in subsequent volumes. Reviewer: Stephen M. Bobbio, Member of the Technical Staff, Microelectronics Center of North Carolina.
Preferred Orientation in Deformed Metals and Rocks: An Introduction to Modern Texture Analysis Edited by Hans-Rud
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