Cantilever Epitaxy of GaN on Sapphire: Further Reductions in Dislocation Density | IBOOK.PUB

Cantilever Epitaxy of GaN on Sapphire: Further Reductions in Dislocation Density

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Cantilever Epitaxy of GaN on Sapphire: Further Reductions in Dislocation Density D. M. Follstaedt, P. P. Provencio, D. D. Koleske, C. C. Mitchell, A. A. Allerman, N. A. Missert and C. I. H. Ashby Sandia National Laboratories, Albuquerque, NM 87185-1056 ABSTRACT The density of vertical threading dislocations at the surface of GaN grown on sapphire by cantilever epitaxy has been reduced with two new approaches. First, narrow mesas (

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