Characteristic Comparison of Epitaxial PZT And PMN-PT Films Grown on (100) c SrRuO 3 //(100)SrTiO 3 Substrates By Metalo
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0902-T03-29.1
Characteristic Comparison Of Epitaxial PZT And PMN-PT Films Grown On (100)cSrRuO3//(100)SrTiO3 Substrates By Metalorganic Chemical Vapor Deposition Shintaro Yokoyama, Satoshi Okamoto, Keisuke Saito1, Takashi Iijima2, Hirotake Okino3, Takashi Yamamoto3, Ken Nishida4, Takashi Katoda4, Joe Sakai5, and Hiroshi Funakubo Department of Innovative and Engineered Materials, Tokyo Institute of Technology, Yokohama 226-8502, Japan 1 Application Laboratory, Bruker AXS, Yokohama 221-0022, Japan 2 Research Institute of Instrumentation Frontier, National Institute of Advanced Industrial Science and Technology, Tsukuba 305-8568, Japan 3 Department of Communications Engineering, National Defense Academy, Yokosuka 239-8686, Japan 4 Depatment of Electronic and Photonic Systems Engineering, Kouchi University of Technology, Kouchi 782-8502, Japan 5 School of Materials Science, Japan Advanced Institute of Science and Technology (JAIST), Ishikawa 923-1292, Japan
ABSTRACT We grew the epitaxial Pb(Zr1-xTix)O3 [PZT] and (1-x)Pb(Mg1/3Nb2/3)O3-xPbTiO3 [PMN-PT] films, above 2 µm in thickness, on (100)cSrRuO3//(100)SrTiO3 substrates by metalorganic chemical vapor deposition (MOCVD). PbTiO3 content (x) dependencies of the crystal structure, dielectric and piezoelectric properties were systematically investigated for these films. The constituent phase changed from a rhombohedral (pseudocubic) single phase, a mixture phase of rhombohedral (pseudocubic) and tetragonal phases, and a tetragonal single phase with increasing x for both of PZT and PMN-PT films. The mixture phase region was observed when x=0.40–0.60 for PZT films and x=0.40–0.55 for PMN-PT films, which became wider than that reported ones for PZT sintered bodies and PMN-PT single crystals. In addition, x value moves to the higher one than that reported for the single crystal and/or the sintered body in case of PMN-PT films, while was almost the same in case of PZT films. The dependence of relative dielectric constant εr was maximum at the mixed phase region for both films, which were similar to the case of their bulk materials. The higher value of εr was ascertained for the PMN-PT films compared with PZT films, however, the magnitude was lower than the reported one for bulk materials. The longitudinal electric-field-induced strain ∆x33 and transverse piezoelectric coefficient e31,f for PZT films were also maximum at the mixed phase region, on the other hand, that for PMN-PT films were maximum at larger x edge of rhombohedral (pseudocubic) region. Almost the same order of ∆x33 was observed under applied electric fields up to 100 kV/cm, while larger e31,f was observed in PMN-PT films compared with the case of PZT films. e31,f coefficients of ~–8.9 C/m2 and ~–11.0 C/m2 were calculated for the PZT film with x=0.46 and for the PMN-PT film with x=0.39, respectively. INTRODUCTION There has been significant interest in Pb-based ferroelectric films such as Pb(Zr,Ti)O3 (PZT) and Pb(Mg1/3Nb2/3)O3-PbTiO3 (PMN-PT) because of their potential advantages for electro-optic and microelectro
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