Characteristic of InGaN/GaN Laser Diode Grown by a Multi-Wafer MOCVD System
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Characteristic of InGaN/GaN Laser Diode Grown by a Multi-Wafer MOCVD System Y. Park, B.j. Kim, J. W. Lee, O. H. Nam, C. Sone, H. Park, Oh Eunsoon, H. Shin, S. Chae, J. Cho, Ig-Hyeon Kim, J.S. Khim, S. Cho and T.I. Kim MRS Internet Journal of Nitride Semiconductor Research / Volume 4 / Issue 01 / January 1999 DOI: 10.1557/S1092578300000570, Published online: 13 June 2014
Link to this article: http://journals.cambridge.org/abstract_S1092578300000570 How to cite this article: Y. Park, B.j. Kim, J. W. Lee, O. H. Nam, C. Sone, H. Park, Oh Eunsoon, H. Shin, S. Chae, J. Cho, Ig-Hyeon Kim, J.S. Khim, S. Cho and T.I. Kim (1999). Characteristic of InGaN/GaN Laser Diode Grown by a Multi-Wafer MOCVD System . MRS Internet Journal of Nitride Semiconductor Research, 4, pp e1 doi:10.1557/S1092578300000570 Request Permissions : Click here
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MRS
Internet Journal Nitride Semiconductor Research
Characteristic of InGaN/GaN Laser Diode Grown by a Multi-Wafer MOCVD System Y. Park1, B. J. Kim1, J. W. Lee1, O. H. Nam1, C. Sone1, H. Park1, Eunsoon Oh1, H. Shin1, S. Chae1, J. Cho1, Ig-Hyeon Kim1, J.S. Khim1, S. Cho1 and T.I. Kim1 1Samsung Advanced
Institute of Technology,
(Received Wednesday, January 6, 1999; accepted Tuesday, January 19, 1999)
InGaN/GaN multi-quantum well (MQW) laser diodes (LDs) were grown on c-plane sapphire substrates using a multi-wafer MOCVD system. The threshold current for pulsed lasing was 1.6 A for a gain-guided laser diode with a stripe of 10 x 800 µm2. The threshold current density was 20.3 kA cm-2 and the threshold voltage was 16.5 V. The optical power ratio of transverse electric mode to transverse magnetic mode was found to be greater than 50. The characteristic temperature measured from the plot of threshold current versus measurement temperature was between 130 and 150K.
1
Introduction
Nitride semiconductor short wavelength laser diodes (LD) have attracted much attention as a light source for the optical data storage. Since Nichia Co. reported pulsed lasing in an InGaN multi-quantum well (MQW) LD in the end of 1995, [1] significant progress has been made in the development of blue LD’s. Nakamura et al. has already demonstrated a blue LD with lifetime in excess of 10,000 hrs. [2] Although Nichia’s conspicuous successes have stimulated the nitride research society during the last three years, until recently a limited number of research groups in the United States and Japan reported continuous wave [3] [4] [5] or pulsed lasing. [6] [7] [8] [9] In this paper, we report InGaN/ GaN MQW LD operated under pulsed conditions. 2
Experiment
The LD structure shown in Figure 1 was grown on a cplane sapphire substrate using a multi-wafer MOCVD system into which three 2” wafers can be loaded in a time. To our knowledge, this is the first report on InGaN/GaN MQW
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