Characteristics of Indium-Gallium-Nitride Multiple-Quantum-Well Blue Laser Diodes Grown by MOCVD
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Characteristics of Indium-Gallium-Nitride Multiple-Quantum-Well Blue Laser Diodes Grown by MOCVD M.P. Mack, A. Abare, M. Aizcorbe, Peter Kozodoy, S. Keller, U. K. Mishra, L. Coldren and Steven DenBaars MRS Internet Journal of Nitride Semiconductor Research / Volume 2 / January 1997 DOI: 10.1557/S1092578300001678, Published online: 13 June 2014
Link to this article: http://journals.cambridge.org/abstract_S1092578300001678 How to cite this article: M.P. Mack, A. Abare, M. Aizcorbe, Peter Kozodoy, S. Keller, U. K. Mishra, L. Coldren and Steven DenBaars (1997). Characteristics of Indium-Gallium-Nitride Multiple-Quantum-Well Blue Laser Diodes Grown by MOCVD . MRS Internet Journal of Nitride Semiconductor Research, 2, pp e41 doi:10.1557/S1092578300001678 Request Permissions : Click here
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M R S
Internet Journal o f
Nitride S emiconductor Research
Volume 2, Article 41
Characteristics of Indium-Gallium-Nitride Multiple-Quantum-Well Blue Laser Diodes Grown by MOCVD M.P. Mack Electrical and Computer Engineering and Materials Departments, University of California, Santa Barbara and Wright Laboratories (WL/AADD) A. Abare, M. Aizcorbe, Peter Kozodoy , S. Keller, U. K. Mishra, L. Coldren, Steven DenBaars Electrical and Computer Engineering and Materials Departments, University of California, Santa Barbara This article was received on September 16, 1997 and accepted on September 17, 1997.
Abstract Room temperature (RT) pulsed operation of blue (420 nm) nitride based multi-quantum well (MQW) laser diodes grown on c-plane sapphire substrates with lifetimes exceeding 6 hours have been demonstrated. Threshold current densities as low as 12.7 kA/cm2 were observed for 10x1200 µm lasers with uncoated reactive ion etched (RIE) facets. The emission is strongly TE polarized and has a sharp transition in the far field pattern above threshold.
1. Introduction Since the report of the first RT pulsed operation of nitride based laser diodes by researchers at Nichia Chemical Industries two years ago [1] a handful of research groups in Japan [2] [3] [4] and recently Cree Research in collaboration with North Carolina State and Brown Universities in the United States have reported pulsed operation, and in the case of Cree, short lived (15 sec) continuous wave (CW) operation [5]. Nichia now reports RT CW operation with lifetimes in excess of 1,000 hours [6]. Despite this significant progress by Nichia and others, the actual lasing mechanism and its relationship to the structural and electrical properties of these materials is not well understood.
2. Experiment The laser structure shown in Figure 1 was grown on c-plane sapphire using a combination of atmospheric and low pressure MOCVD in a two-flow horizontal reactor. The chemical precursors used were trimethylgallium (TMGa), trimethylindium
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