Characteristics of Resistive Switching of SRO/SrZrO 3 /Pt Stack Processed at Full Room Temperature
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ORIGINAL ARTICLE - ELECTRONICS, MAGNETICS AND PHOTONICS
Characteristics of Resistive Switching of SRO/SrZrO3/Pt Stack Processed at Full Room Temperature Tae Hyun Kim1 · Min Kyu Yang1 Received: 7 September 2020 / Accepted: 10 November 2020 © The Korean Institute of Metals and Materials 2020
Abstract The resistance switching behavior of SRO/SZO/Pt devices is investigated in room temperature (RT). First, it was manufactured as a single cell to see its electrical characteristics, and it was operated by bipolar resistive switching (BRS). In addition, to analyze the switching mechanism of the cell deposited at room temperature, an area dependence test and a temperature dependence test were performed. As a result, in the low resistance state (LRS) there was no area-dependent and temperaturedependent, whereas in the high resistance state (HRS), the area-dependent and temperature-dependent local conduction filament model was estimated. In addition, an 8 × 8 array is fabricated using a room-temperature process that is commercially advantageous. The electrical characteristics are excellent; stable retention characteristics (125 °C, 2 h) and stable switching cycle (109) operations are observed, which are applicable to next-generation memory. Graphic abstract
Keywords ReRAM · Resistive switching · SZO · SRO
1 Introduction
* Min Kyu Yang [email protected] 1
Department of IT Convergence Engineering, Intelligent Electronic Device Lab, Sahmyook University, 815 Hwarang‑ro, Nowon‑Gu, Seoul 01795, Republic of Korea
Resistive random-access memory (ReRAM) is a type of next-generation nonvolatile memory. ReRAM exploits the phenomenon that when a sufficiently high voltage is applied to a nonconductive material, conducting paths through which current flows are generated, resulting in a lower resistance. Once conducting paths are created, they can be
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easily removed or regenerated by applying a suitable voltage. Recently, crossbar-type resistive switching (RS) has attracted considerable interest for use in next-generation nonvolatile memory or new memory processing applications. Because of its nonvolatility, low power consumption, simple chemical composition, and fast operating speed, it has attracted considerable attention. [1–5] RS properties have been reported for various binary metal oxides, typically TiOx, NbOx, NiO, and MnOx exhibiting single polarity RS behavior that can be explained using previously proposed models. [6–9] Meanwhile, SrTiO3 (STO) [10], SrZrO3 (SZO) [11], and Pr1-x CaxMnO3 [12] compounds are often described in terms of the interfacial effect between the oxide and electrode. In addition, the complex RS mechanism combined with the filament model and the interface effect showed complex RS characteristics in the heterogeneous RS system. However, the description of the mechanism is still poorly described, and problems such as process improvement and device reliability characteristics remain in the commercialization of ReRAM. Among them, the ReRAM device having a perovskite str
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