Characteristics of SiC inverter powertrains on common-mode EMI noise
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ORIGINAL ARTICLE
Characteristics of SiC inverter powertrains on common‑mode EMI noise Xiaoyu Jia1 · Bitao Dong1 · Hui Wang1 · Changsheng Hu1 · Dehong Xu1 Received: 20 July 2020 / Revised: 6 November 2020 / Accepted: 9 November 2020 © The Korean Institute of Power Electronics 2020
Abstract This paper studies the characteristics of SiC inverter powertrains on common-mode (CM) EMI emission. First, a CM noise source model of an EV powertrain is built. Then, the factors of switching frequency, switching speed, and switching ringing on the CM noise source are analyzed. Finally, experiments on a conducted EMI test-bed are carried out to verify the influence of SiC inverters on conducted CM EMI emission in EV powertrains. Keywords Electromagnetic interference (EMI) · Common mode (CM) · SiC MOSFET · Switching frequency · Switching speed · Switching ringing
1 Introduction Wide-band-gap (WBG) devices applied in hybrid and electric vehicles (EV) have become a hot topic recently due to their outstanding performance, such as smaller loss and higher switching speed [1–3]. SiC traction inverters have been developed [4, 5] and used in commercial products [6, 7]. However, the electromagnetic interference (EMI) issue from the high-frequency switching of SiC MOSFETs and their high dv/dt is still concern. For EV powertrains with SiC inverters, there are three factors contributing to EMI noise, which is more severe than that of IGBT inverters. First, since a SiC inverter can operate at a higher switching frequency than an IGBT inverter, an increase of the switching frequency may contribute to an increase of the EMI noise. In [8], the CM EMI of a SiC inverter powertrain increases by 20 dB in the whole-frequency range when the switching frequency increases from 20 to 200 kHz. In [9], the impact of SiC inverter switching frequency is studied. With an increasing of the inverter switching frequency, the EMI noise peak increases in the whole EMI spectrum. Second, the high dv/dt of SiC MOSFETs may cause high EMI noise. The dv/dt of a SiC MOSFET can reach as high as tens of kilovolt per microsecond, * Dehong Xu [email protected] 1
College of Electrical Engineering, Zhejiang University, Hangzhou, China
which is up to ten times that of an IGBT. The high dv/dt results in easy penetration of EMI noise through the parasitic capacitance in the powertrain. In [10], the switching rise and fall rate of a power device versus its high-frequency spectral amplitude is investigated. A high switching speed results in a high EMI noise amplitude. In [11], the highfrequency spectral amplitude of device switching waveforms is quantified experimentally for all-Si, Si-SiC, and all-SiC device combinations. The voltage spectral amplitude of SiC devices exceeds that of IGBT devices by almost 30 dB at 30 MHz. Finally, there is strong switching ringing around the tens of megahertz frequency range when the SiC MOSFET switches due to the parasitic resonance between the stray inductance and the capacitance of the power device [11, 12]. These switching spikes of SiC
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