Radiated disturbance characteristics of SiC MOSFET module
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ORIGINAL ARTICLE
Radiated disturbance characteristics of SiC MOSFET module Huazhen Huang1 · Ningyan Wang2 · Jialing Wu1 · Tiebing Lu1 Received: 29 July 2020 / Revised: 11 November 2020 / Accepted: 13 November 2020 © The Korean Institute of Power Electronics 2020
Abstract Wide band gap semiconductor device silicon carbide (SiC) metal oxide semiconductor field effect transistors (MOSFETs) have many advantages and are considered to be the most promising alternative to silicon (Si) insulated gate bipolar transistors (IGBTs) in low-/medium-voltage fields. However, a faster switching speed results in more serious electromagnetic disturbance problems in the application of SiC MOSFET. In this paper, an experiment system is established to measure the radiated disturbance of a single SiC MOSFET module operating at 9 kHz–300 MHz. The radiated electric fields of the SiC MOSFET module are mainly concentrated within 160 MHz. The switching voltage and radiated disturbance of the Si IGBT module are measured and compared with those of the SiC MOSFET module. The voltage of the SiC MOSFET has a faster change rate and a higher overshoot, which results in the radiated electric fields of SiC MOSFET module being 5–10 dB higher than those of the Si IGBT module below 8 MHz. The measurement results in the time-domain and frequency-domain correspond. A detailed model of a SiC MOSFET module is established and the radiated electric fields are calculated using the method of moments (MOM). The calculated results show the effectiveness of the model for radiated disturbance prediction. In this paper, the radiated electric fields of a SiC MOSFET module are measured and analyzed, and the calculation model can be used to further evaluate the radiated disturbance characteristics of SiC MOSFET and influencing factors. Keywords SiC MOSFET module · Si IGBT module · Radiated electric field · Calculation model · MOM
1 Introduction The performance of silicon (Si) semiconductor devices is close to the limit of Si material, and it is difficult to meet the higher requirements in terms of efficiency, power density, and switching frequency [1]. In recent years, power electronic devices based on wide band gap materials such as silicon carbide (SiC) have been rapidly developing to achieve higher application requirements [2–4]. Among the different kinds of SiC devices, SiC metal oxide semiconductor field effect transistors (MOSFETs) are currently the most commercially successful. In addition, they are considered to be the most promising device to replace Si insulated gate bipolar transistors (IGBTs) in high-power and low-/medium-voltage applications. The switching frequency of SiC MOSFET * Tiebing Lu [email protected] 1
State Key Lab of Alternate Electrical Power System with Renewable Energy Sources, North China Electric Power University, Beijing, China
Fujian Electrical Power Research Institute, Fuzhou, China
2
can reach more than 100 kHz due to its faster switching speed and lower switching losses, while the switching frequency of Si IGBT conv
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