Characterization of SiO 2 /SiC Samples Using Photoelectron Spectroscopy
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2 /SiC
SAMPLES USING
PHOTOELECTRON SPECTROSCOPY L. I. JOHANSSON*, P- A. GLANS*, Q. WAHAB*, T.M. GREHK**, TH. EICKHOFF**, W. DRUBE** *Department of Physics, Linkoping University, S-58183 Linkoping "**Hamburger Synchrotronstrahlungslabor HASYLAB am Deutschen ElektronenSynchrotron DESY, D-22603 Hamburg
ABSTRACT The results of photoemission studies of Si0 2/SiC samples for the purpose of revealing presence of any carbon containing by-products at the interface are reported. Two components could be identified in recorded Si 2p and C ls core level spectra. For Si 2p these were identified to originate from Si0 2 and SiC while for C ls they were interpreted to originate from graphite like carbon and SiC. The variation in relative intensity of these components with emission angle was first investigated. Thereafter the intensity of the different components were studied after successive Ar+-sputtering cycles. Both experiments showed contribution from graphite like carbon on top of the oxide but not at the interface.
INTRODUCTION The defect density at the oxide/semiconductor interface is an important factor for the performance of devices. For Si0 2 /SiC the defect densities obtained to date are relatively high and one limiting factor for the formation of a high quality oxide is considered to be a carbon containing by-product at the interface. Studies of oxide layers thermally grown on SiC have earlier been reported using Auger Electron Spectroscopy (AES) [1] , transmission electron microscopy (XTEM) [2] and X-ray Photoelectron Spectroscopy (XPS) [3]. The XTEM results showed a homogeneous Si0 2 layer with a well defined interface and the AES results showed an oxide layer free from carbon related compounds except for a region very close to the interface. In the angle resolved XPS study [3] an interface Si 4 C4 .xO2 (x
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