Characterization of Surfaces and Thin Films by Means of an Ion Microprobe Analyzer
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CHARACTERIZATION OF SURFACES AND THIN FILMS BY MEANS OF ANION MICROPROBE ANALYZER Eiichi Izumi: Yoshinori Ikebe* Hiroyasu Shichi:* Hifumi Tamura.* * Naka Works, Hitachi Ltd. 882 Ichige, Katsuta, Ibaraki 312, Japan. -*Central Research Laboratory, Hitachi Ltd. 1-286 Higashi Koigakubo, Kokubunji, Tokyo 185, Japan
A variety of materials such as semiconductors, metals, and insulators have been analyzed by use of the Hitachi IMA-3 ion microprobe analyzer. From the depth profile of a GaAs/AQ GaAs superlattice(50A), a depth resolution of 45A was obtained at 2350A below the surface. The stable depth profile of a multilayer plastic film was obtained by using the negative ion beam(O-) as a primary ion for charge neutralization. Further, the usefulness of the total ion monitoring method for correcting the changing factors of secondary ion intensity is demonstrated.
1.Introduction Recently, high performance materials have been actively developed. It is very important to analyze the surface of the materials for thier characterization. AES,XPS,ISS,RBS and SIMS have been utilized for surface analysis.' 2 TEM has been utilized too.' Among them secondary ion mass spectrometry(SIMS) has the highest sensitivity. It can also depth profile materials by sputter etching with the primary ions. Accordingly, SIMS is able to efficiently measure the depth distribution of impurities and determine the constitution of multilayers. These measurements are required of insulating materials. The IMA-3 is a high performance and multifunction 4 SIMS instrument, and it was developed for the above objects. This paper introduces analytical results of multilayer and insulating thin layers by use of the IMA-3, and the total ion monitoring method for correcting for the changing secondary ion intensity sensitivity factors. 2.Experimental Measured samples are GaAs/A QGaAs superlattice(each 50A) formed by a MBE method and a multilayer plastic film. Fig.1 shows the ion optics of the IMA-3. It has a hollow cathode ion source, a surface ionization ion source and a liquid metal ion source. O *(0-) primary ions from the hollow cathode ion source are used for the analysis of electro-positive elements, and Cs÷ primary ions from the surface ionization ion source are used for the analaysis of electro-negative elements.' Ga÷ primary ions from the liquid metal ion source are used for analysis and observation of submicron areas. Each of the ion sources are easily exchangable with each other. The primary ion irradiation system adopts off-axial optics for eliminating the neutral particles existing in the primary ion beam, thereby enhancing the dynamic range in concentration in depth profiling analysis. After introducing a specimen at the horizontal position, the specimen is analyzed at 45 degrees from the horizontal plane. The incident angle of the primary ion beam is 45 degrees and the secondary ions are extracted perpendicular from the surface of specimen.
Mat. Res. Soc. Symp. Proc. Vol. 75. 1987 Materials Research Society
740
The specimen chamber is equipped with an
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