Characterization of the Degradation Processes in the Buried Heterostructure Quantum Well Laser Diodes Using Internal Sec
- PDF / 323,526 Bytes
- 5 Pages / 414.72 x 648 pts Page_size
- 2 Downloads / 191 Views
525 Mat. Res. Soc. Symp. Proc. Vol. 355 01995 Materials Research Society
EXPERIMENTAL AIGaAs/Ga(In)As single quantum well buried heterostructure single spatial mode laser diodes with the active layer width of the order of 3 Am were used in this study. Buried heterostructure laser diode fabrication is described in detail elsewhere 9.Initial quantum well laser structures were grown by metalo-organic chemical vapor deposition and were of two types: (a) -unstrained A1GaAs/Ga(A1)As single quantum well structure with the emission wavelength around 810 nm, (b) strained A1GaAs/InGaAs SQW epitaxial with the emission wavelength of 980 nstructure rm. CURRENTý F 1 LPFD FD Our experimental setup is shown schematically in Fig. 1. The laser diode is driven by a DC current source. The current pulse generator IG superimposes single current pulse (t< IpS)on DC bias current Idc. Laser diode emission is collimated by the lens LI and is divided by a beam splitter BS1. One part of the light is directed towards SH intensity monitor. Another part of the light is divided again by BS2 and a part of it is directed toward photodetector for monitoring the FH optical power and another part of light is used for visualizing the near field of the laser diode. Two laser diodes were selected for this study (see Fig. 2, (a) and (b)). Light-current
Fig. 1. Schematic block diagram of experimental setup.
3 70
4
,') •,?
60
1
F5 0
L'
~30 0
0
0 CL
-20
0
0>
0
10 0
3
50 100 150 CURRENT, mA
0.5 CURRENT, A
200
.0
Fig.2. Light-current and I-V characteristics of the SQW BH single spatial mode LD with the active layer width 3 Am. (a) - AIGaAs unstrained active layer LD structure with the emission wavelength 810 nm. (b) - InGaAs strained active layer LD structure with the emission wavelength of 980 nm.
526
3
P90
a3
U)
2 .2
o80
Data Loading...
