Combined Semiconductor Injection Magnetic Field Sensors for Wireless Information Networks
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ined Semiconductor Injection Magnetic Field Sensors for Wireless Information Networks I. M. Vikulin1*, L. F. Vikulina2, V. E. Gorbachev3**, and N. S. Mikhailov1 1
National University “Odessa Maritime Academy”, Odessa, Ukraine 2 Odessa State Agrarian University, Odessa, Ukraine 3 Odessa National Academy of Telecommunications, Odessa, Ukraine *ORCID: 0000-0003-3887-6676 **ORCID: 0000-0002-6668-6864, e-mail: [email protected] Received September 27, 2019 Revised May 29, 2020 Accepted July 6, 2020
Abstract—The possibility of sensitivity increasing of magnetic field sensors by combining different types of sensitive elements in one sensor circuit is experimentally investigated. For this purpose, four new sensor constructions are proposed: based on bridge circuit, based on magnetotransistor in combination with magnetodiode or with second magnetotransistor and with frequency output. More thermostable and radiation-resistant sensor with 10 times greater sensitivity than in conventional two-diode bridge sensor is obtained with four polar magnetodiodes in bridge circuit, instead of two non-polar ones. Sensor constructions with two-collector magnetotransistors in combination with two polar magnetodiodes or one additional magnetotransistor are described. The sensitivity of such devices is 6 and 4 times higher compared to single-transistor sensors, while their temperature stability and radiation resistance increase. Relaxation generator circuit based on unijunction transistor is proposed as magnetic field sensor with frequency output. Inclusion of additional magnetodiode in generator circuit increases sensitivity by 2.3 times in comparison with single-transistor sensor and improves environmental stability. The described devices can be used as effective magnetic field sensors in wireless communication networks. DOI: 10.3103/S0735272720070043
1. INTRODUCTION The world leader in standards development for radio electronics, electrical engineering and hardware for computing systems and networks, IEEE Institute of Electrical and Electronics Engineers, along with BigData, CloudComputing and Cybersecurity, set further development of Internet of things concept (IoT). It assumes the presence of ubiquitous sensor network and executive networks on intelligent objects. This development is limited by wired and fiber-optic communications, because of their high price and implementation complexity. Therefore, researches on creation radio-controlled contactless executors and wireless autonomous sensors of physical values are relevant at present [1, 2]. Magnetosensitive devices are widely used in executive networks as hitless switches, eddy current motors and in sensor networks as electronic compasses [3, 4], systems of RAM and long-term memory [5, 6], sensors of various values (pressure, movement, shaft speed etc.), in electronic ignition systems of automobiles. Currently ultrahigh magnetoelectric sensors allowing to register fields with induction 10–12 T [7] and resonator sensors with sensitivity of 92 µV/mT [8] are developed. However, rather a
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