Comparative Characteristics of GaAs Detectors and Silicon Pixel Detectors with Internal Amplification
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1108-A06-05
Comparative characteristics of GaAs detectors and silicon pixel detectors with internal amplification G. I. Koltsov1, V. N. Murashev1, A. P. Chubenko2, R. A. Mukhamedshin3, G.I.Britvich4, S. V.Chernykh1, A. V.Chernykh1 1 Moscow State Institute of Steel and Alloys, Moscow, Russia 2 Lebedev Physical Institute of RAS, Moscow, Russia 3 Institute for Nuclear Research of RAS, Moscow, Russia 4 Institute for High Energy Physics, Protvino, Russia ABSTRACT Comparative analysis of GaAs semiconductor radiation detectors and silicon pixel ones with internal amplification elaborated for detection of nuclear radiation is carried out. Electrophysical and spectral characteristics are compared. Both the detector types have high sensitivity to α, β and γ radiation and can be applied in space and accelerator experiments for energy determination of elementary particles as well as in astrophysics, transmission and reflecting electron microscopy, medicine, biology and so on. INTRODUCTION Semiconductor detectors of radiation have extremely wide application area in nuclear physics, space instruments and elementary particle accelerators experiments. This fact is related to the measurement accuracy in energy loss (∆Е), the simplicity of the registration algorithm of an output signal, and also such a demand is related to the probability of the high spatial resolution (up to 10 µm) production, as compared to scintillation and gas-filled detectors. Semiconductor structures are used as the particle energy and charge detectors during the experiments needing registration of low-energy particles and nuclear fragment. Silicon detectors were basically used for the last decades because of their relatively low material price and well-developed active layers production technology. The superpure silicon price is close to the gallium arsenide value. The last one has some obvious advantages related to its average nucleus charge and density. For example, energy losses in material depends on average charge as Z2. During the γ-ray and hard X-ray registration in the photo effect diapason, the interaction cross-section is in proportion to Z4 – Z5. In some experiments, there is a probability of cheap replacement of silicon detectors by more progressive arsenide gallium ones. For fast, linear and coordinate registration of radiation particles, in some cases, the detector being capable to provide linear amplification arising directly during interaction of radiation particle with the detector material in the chip is needed. There are three basic methods of interior amplification production, used in modern coordinate semiconductor detectors: - avalanche effect in diodes usage; - the integration of p-n
diode and preamplifier’s input stage in detector’s pixel on one chip; - application of MOS FET with depleted channel [1]. In this manuscript, the structure of pixel silicon coordinate detector based on functionally-integrated semiconductor structure [2] is proposed, and the comparison of its performance versus GaAs surface barrier detector is made. In the
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