Comparison of Conductance and Capacitance techniques for Measurement of Interface States in Thin Oxides
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Comparison of Conductance and Capacitance techniques for Measurement of Interface States in Thin Oxides
T. K. Higman Department of Electrical and Computer Engineering, University of Minnesota 200 Union St. S.E. Minneapolis, Minnesota 55455, U.S.A ABSTRACT Current trends in integrated circuit processing project gate insulators with oxide equivalent thicknesses of 1.5 to 1.0 nm. Gate oxides in this thickness range have oxide capacitances of 1 to 5 µF/cm2. When oxide capacitances are this large, traditional high-frequency capacitance-voltage techniques for measuring interface states can be inaccurate. We show that a combination of high and low frequency capacitance-voltage data, along with frequency dependent conductance methods, produce more accurate results.
INTRODUCTION It is common practice to characterize thin insulating films on semiconductors by using capacitancevoltage measurements, and a considerable literature has been published based on these techniques, but virtually all of the published data refers to the silicon-SiO2 interface. One of the drawbacks to this is that since the oxide capacitance of these films was relatively low (
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