Comparison of simulated and measured light emission spectra from solid state incandescent light emitting devices
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MRS Advances © 2020 Materials Research Society DOI: 10.1557/adv.2020.308
Comparison of simulated and measured light emission spectra from solid state incandescent light emitting devices Abhinav Shukla1, Yue Kuo1, and Tyler W. Kuo2 1
Thin Film Nano & Microelectronics Research Lab, Texas A&M University, College Station, TX, United States
2
Department of Electrical and Computer Engineering, The University of Texas at Austin, Austin, TX, United States.
ABSTRACT
In this paper, the light emission phenomena over solid-state incandescent light emitting devices have been modelled based on Planck’s law of blackbody radiation. The emission spectra from the thermal excitation of nano-resistors with and without inclusion of an Indium Tin Oxide (ITO) or amorphous silicon (a-Si) thin film filter is simulated and compared with those measured from actual devices. The simulated emission spectra are further utilized to study the light characteristics for SSI-LED with ITO, a-Si and polycrystalline silicon (poly-Si) thin film filters.
INTRODUCTION Conventional LEDs emit light by electron-hole or exciton-exciton recombination [1]. As a result, emission of narrow band light corresponding to the band gap energy of the semiconductor material is observed. Regardless of their high efficiency, such LEDs are made up of hetero-epitaxy layers grown on single crystal substrate that uses low deposition rate molecular beam epitaxy or highly toxic MOCVD process, which requires the minimization of lattice mismatch [2]. Moreover, the lifetime of this kind of device is highly dependent upon defects in the bulk films and at interfaces [3]. Contrary to 1
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this, the warm white light emission phenomena from a single solid-state incandescent light emitting device (SSI-LED) was reported by Kuo's group [2,4-8]. This device is composed of a very large number of nano-resistors formed from the breakdown of a MOS capacitor with a few nm-thick high-k gate dielectric thin film on a p-type Si wafer, under the stress of a large negative gate voltage (-Vg) [4,5]. Light in the visible and infrared range is emitted during the passage of the current through the nano-resistors as a consequence of electromagnetic radiation generated by thermal excitation of the nanoresistors [7,8]. The light emission phenomena have been reported to last for more than 20,000 hours under the continuous operation condition in air without a passivation layer [9]. The emitted light can be narrowed down using thin film filters like hydrogenated amorphous silicon (a-Si:H), making such devices a potential useful light source for onchip optical interconnect systems [10]. A-Si:H is a widely known material used in ICs, thin film transistors, solar cells, etc. [11-19]. It is known to absorb light with wavelength below 600 nm [20]. Optical interconnection is pro
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