Comparison of the Efficiency of Promising Heterostructure Frequency-Multiplier Diodes of the THz-Frequency Range
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INTERNATIONAL SYMPOSIUM “NANOPHYSICS AND NANOELECTRONICS”, NIZHNY NOVGOROD, MARCH 10–13, 2020
Comparison of the Efficiency of Promising Heterostructure Frequency-Multiplier Diodes of the THz-Frequency Range D. I. Dyukova, A. G. Fefelova, A. V. Korotkova,c, D. G. Pavelyevc, V. A. Kozlovb,c, E. S. Obolenskayac,*, A. S. Ivanova,c, and S. V. Obolenskyc a OAO
b
Scientific-Production Enterprise “Salyut”, Nizhny Novgorod, 603950 Russia Institute for Physics of Microstructures, Russian Academy of Sciences, Nizhny Novgorod, 607680 Russia c Lobachevsky State University of Nizhny Novgorod, Nizhny Novgorod, 603950 Russia *e-mail: [email protected]; [email protected] Received April 15, 2020; revised April 21, 2020; accepted April 21, 2020
Abstract—The results of theoretical and experimental comparison of the signal-conversion efficiency by diodes based on superlattices with a small number of periods (N-like current–voltage characteristic) and promising frequency-multiplier diodes (varactors) (parabolic capacitance–voltage characteristic) are presented. Keywords: diodes based on superlattices, nonlinear current-voltage characteristic, varactor, parabolic capacitance–voltage characteristic, signal-frequency multipliers DOI: 10.1134/S1063782620100073
1. INTRODUCTION It is known [1–3] that diodes with nonlinear current–voltage and capacitance–voltage characteristics can be used in signal-frequency multipliers, and the characteristic nonlinearity type determines the degree of efficiency of signal power conversion into the second and third harmonics and harmonics of higher multiplicity. We already compared in [4] the signalconversion efficiency by Schottky diodes and diodes based on GaAs/AlAs superlattices (SLs) (Fig. 1a) having nonlinear current–voltage I–V characteristics (Fig. 2) and determined that a superlattice-based frequency-multiplier diode has an advantage when using harmonics higher that third one in the frequency range of the multiplied signal of 0.1–1 THz. It was found that the harmonics of SL-based diodes drop slower than those of Schottky diodes. The experimental output power of the signal for the third harmonic is fourfold higher than for the fifth harmonic and is higher by a factor of 3.5 for the fifth harmonic than for the seventh harmonic [4]. In this work, we present the results of experimental and theoretical comparison of the signal-conversion efficiency by diodes based on GaAs/AlAs superlattices [5, 6] with an improved design (with a smaller number of superlattice periods) having an N-like current–voltage characteristic and promising heterobarrier frequency-multiplier diodes (varactors) (Fig. 1b) having
a parabolic capacitance–voltage C–characteristic (Fig. 2) [1]. Heterobarrier varactor diodes (HBVs) belong to promising active components for the fabrication of effective frequency multipliers of the millimeter and submillimeter ranges [7–9]. HBVs are implemented based on epitaxial heterostructures, in which an undoped wide-gap semiconductor material, for example, InAlAs (the barrier), is “co
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